A high-performance DC zinc oxide resistor and its preparation process
A technology of zinc oxide resistance chip and preparation process, which is applied in the direction of resistance manufacturing, resistors, varistors, etc., which can solve problems such as thermal collapse, overvoltage and overcurrent load, etc., to suppress volatilization, improve aging life, and improve stability Effect
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Embodiment 1
[0020] The invention provides a high-performance DC zinc oxide resistor and a preparation process thereof, comprising the following steps:
[0021] (1) Weigh ZnO 93.49mol, Bi 2 o 3 0.9mol, Sb 2 o 3 1mol, Co 2 o 3 0.5mol, SiO 2 0.6mol, MnO 2 0.6mol, Cr 2 o 3 1.5mol, NiO 0.2mol, B 2 o 3 0.4mol, Al(NO 3 ) 3 9HO 0.06mol, V 2 o 5 0.5mol, CeO 2 0.05mol, silver glass powder 0.2mol, mix well;
[0022] (2) Ball milling in a high-energy ball mill for 5 hours, drying at 90° C. in a blast dryer for 12 hours, and granulating the dry powder with an aqueous solution of polyvinyl alcohol to obtain a resistor powder;
[0023] (3) Under the action of a tablet press, the powder is dry-pressed to make a resistor blank;
[0024] (4) Cover the bismuth-containing oxide on the surface of the resistor sheet blank and carry out high-temperature firing at 1100 ° C for 2.5 hours;
[0025] (5) By spraying Bi 2 o 3 The slurry is evenly coated on the end face of the resistance sh...
Embodiment 2
[0029] The invention provides a high-performance DC zinc oxide resistor and a preparation process thereof, comprising the following steps:
[0030] (1) Weigh ZnO 94.77mol, Bi 2 o 3 0.7mol, Sb 2 o 3 1mol, Co 2 o 3 0.7mol, SiO 2 0.5mol, MnO 2 0.5mol, Cr 2 o 3 0.5mol, NiO 0.4mol, B 2 o 3 0.2mol, Al(NO 3 ) 3 9HO 0.06mol, V 2 o 5 0.3mol, CeO 2 0.07mol, silver glass powder 0.3mol, mix well;
[0031] (2) Ball milling in a high-energy ball mill for 5 hours, drying at 90° C. in a blast dryer for 12 hours, and granulating the dry powder with an aqueous solution of polyvinyl alcohol to obtain a resistor powder;
[0032] (3) Under the action of a tablet press, the powder is dry-pressed to make a resistor blank;
[0033] (4) Cover the bismuth-containing oxide on the surface of the resistor sheet blank and carry out high-temperature firing at 1050 ° C for 3 hours;
[0034] (5) By spraying Bi 2 o 3 The slurry is evenly coated on the end face of the resistance shee...
Embodiment 3
[0038] The invention provides a high-performance DC zinc oxide resistor and a preparation process thereof, comprising the following steps:
[0039] (1) Weigh ZnO 93.94mol, Bi 2 o 3 0.5mol, Sb 2 o 3 1mol, Co 2 o 30.8mol, SiO 2 0.4mol, MnO 2 0.5mol, Cr 2 o 3 1mol, NiO 0.6mol, B 2 o 3 0.3mol, Al(NO 3 ) 3 9HO 0.06mol, V 2 o 5 0.4mol, CeO 2 0.1mol, silver glass powder 0.4mol, mix well;
[0040] (2) Ball milling in a high-energy ball mill for 5 hours, drying at 90° C. in a blast dryer for 12 hours, and granulating the dry powder with an aqueous solution of polyvinyl alcohol to obtain a resistor powder;
[0041] (3) Under the action of a tablet press, the powder is dry-pressed to make a resistor blank;
[0042] (4) Cover the bismuth-containing oxide on the surface of the resistor sheet blank and carry out high-temperature firing for 4 hours at 1150 ° C;
[0043] (5) By spraying Bi 2 o 3 The slurry is evenly coated on the end surface of the resistance sheet a...
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