IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof

An active drive and circuit technology, applied in the field of power electronics, can solve problems such as overvoltage damage to devices, achieve the effects of small signal delay, avoid excessive power, and speed up switching speed

Active Publication Date: 2016-03-23
武汉汉威原力微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the traditional voltage-type open-loop drive mode, speeding up the switching speed can reduce the switching loss, but at this time the voltage overshoot will increase, which will cause EMI problems and even cause device overvoltage damage

Method used

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  • IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof
  • IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof
  • IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and driving method thereof

Examples

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Embodiment Construction

[0051] In order to express the present invention more clearly, the present invention will be further described below in conjunction with the accompanying drawings.

[0052] The IGBT closed-loop active drive circuit of the present invention includes a forward turn-on module and a reverse turn-off module, and both the forward turn-on module and the reverse turn-off module include a level shift circuit, a first logic control circuit, and a closed-loop feedback path. The second logic control circuit, the first current drive circuit, the second current drive circuit, the first comparator circuit, the second comparator circuit, the first delay circuit and the second delay circuit; the level shift circuit is respectively connected with the first The logic control circuit is electrically connected to the input end of the second logic control circuit, the first comparator circuit is electrically connected to the input end of the second logic control circuit through the first delay circu...

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PUM

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Transistor) closed loop active driving circuit and a driving method thereof. The circuit comprises a forward opening module and a reverse closing module, wherein each of the forward opening module and the reverse closing module comprises a level shifting circuit, a first logic control circuit, a second logic control circuit, a first current driving circuit, a second current driving circuit, a first comparator circuit, a second comparator circuit, a first time delay circuit and a second time delay circuit which together form a closed loop feedback path. A current source mode is adopted, the driving current is directly controlled, and through quickening the switching speed, the switching loss is reduced; and through sampling dv / dt and di / dt signals, during the IGBT switching dynamic process, real-time closed loop control on the gate driving current is realized, and compared with the IGBT driving circuit in the traditional open loop mode, voltage overshoot is not increased while the switching speed is quickened.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to an IGBT closed-loop active drive circuit and a drive method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite power electronic device composed of MOSFET (Insulated Gate Field Effect Transistor) and BJT (Bipolar Transistor). It not only has the advantages of large capacity and low saturation voltage of BJT, but also has the advantages of fast switching speed and low driving power of MOSFET. Its frequency characteristics are between MOSFET and BJT, and it can work normally in the frequency range of tens of kHz. Used in frequency converter, lighting circuit, switching power supply and other fields. [0003] The drive circuit is an important part of the power electronic device. The input end is connected to the output end of the PWM signal of the control circuit, and the output end is connected to the ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/36
CPCH02M1/08H02M1/36H02M1/0054Y02B70/10
Inventor 童乔凌王涛钱雯雷冕李涛
Owner 武汉汉威原力微电子有限公司
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