Silicon carbide semiconductor substrate, method for producing same, and method for producing silicon carbide semiconductor device
A silicon carbide and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as uneven silicon carbide semiconductor substrates
Active Publication Date: 2016-03-30
SUMITOMO ELECTRIC IND LTD
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Problems solved by technology
However, when the silicon carbide semiconductor substrate has an outer diameter of, for example, about 6 inches, the silicon carbide semiconductor substrate becomes uneven
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no. 1 example
[0055] refer to figure 1 , silicon carbide semiconductor substrate 10 according to the first embodiment will be described. Silicon carbide semiconductor substrate 10 according to the present embodiment includes: base substrate 1 ; epitaxial layer 2 formed on main surface 1A of base substrate 1 ; and deformation suppressor formed on backside surface 1B of base substrate 1 . Layer 8.
[0056] Base substrate 1 is made of single crystal silicon carbide, and has main surface 1A with an outer diameter of 6 inches. Base substrate 1 is made of, for example, silicon carbide having a hexagonal crystal structure, and preferably has a crystal polytype (polymorph) of 4H—SiC. Base substrate 1 includes a high concentration of n-type impurities such as nitrogen (N), and has n-type conductivity. The base substrate 1 has, for example, approximately not less than 1.0×10 18 cm -3 And not more than 1.0×10 18 cm -3 impurity concentration. Main surface 1A may correspond to a {0001} plane, an...
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Abstract
This silicon carbide semiconductor substrate (10) is equipped with: a base substrate (1) made from single crystal silicon carbide and having a principal surface (1A) with an outer diameter of at least 100mm; an epitaxial layer (2) formed on the principal surface (1A); and a deformation-suppressing layer (8) formed on the rear surface (1B) which is positioned on the reverse side to the principal surface (1A) of the base substrate (1). By adopting this configuration, the deformation of the substrate (for example warping of the substrate during high-temperature processing) is minimized by the deformation-suppressing layer (8). As a consequence, when implementing a method for producing a silicon carbide semiconductor device using the silicon carbide semiconductor substrate (10), it is possible to reduce the risk of abnormalities such as cracking from occurring in the silicon carbide semiconductor substrate (10) during the production process.
Description
technical field [0001] The present invention relates to a silicon carbide semiconductor substrate, a method of manufacturing a silicon carbide semiconductor substrate, and a method of manufacturing a silicon carbide semiconductor device, and in particular, to a silicon carbide semiconductor having high flatness even when heat-treated at a high temperature A substrate, a method of manufacturing a silicon carbide semiconductor substrate, and a method of manufacturing a silicon carbide semiconductor device. Background technique [0002] In recent years, silicon carbide (SiC) crystals have been adopted as semiconductor substrates for manufacturing semiconductor devices. SiC has a larger bandgap than silicon (Si), which has been more widely adopted. Therefore, a semiconductor device using SiC advantageously has characteristics of high breakdown voltage, low on-resistance, and less likely to degrade in a high-temperature environment. [0003] Also, in order to efficiently manufa...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L21/20H01L21/205H01L21/265H01L21/336H01L29/06H01L29/12H01L29/78
CPCH01L21/02529H01L21/0262H01L21/046H01L29/66068H01L29/1608H01L21/047H01L29/7811H01L29/0619H01L21/02378H01L21/02664H01L21/02694
Inventor 堀井拓增田健良
Owner SUMITOMO ELECTRIC IND LTD