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Low-melting-point alloy and preparation method thereof

A low melting point, alloy technology, applied in the field of alloys, can solve the problems of high electrical conductivity and low melting point, achieve the effects of excellent electrical conductivity, increase the viscosity of the alloy, and reduce the melting point of the alloy

Active Publication Date: 2016-04-06
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to propose a low-melting-point alloy which has the performance of arbitrary deformation similar to that of plasticine at room temperature, and also has low-melting-point alloys at room temperature. Melting point and high conductivity properties

Method used

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  • Low-melting-point alloy and preparation method thereof

Examples

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Embodiment 1

[0030] This embodiment discloses a Ga-In-Sn-Cd-Zn plasticine low-melting alloy whose general formula is GaInSnCd 1.5 Zn.

[0031] GaInSnCd 1.5 The preparation method of Zn alloy is as follows: take Ga, In, Sn, Cd and Zn raw material according to the molar ratio of design, wherein Ga, In, Sn, Cd, Zn all select the industrial grade pure raw material that purity is more than 99wt% for use, then use Vacuum high frequency induction furnace for vacuum melting. When smelting alloys, the volatile raw materials Cd and Zn with lower boiling points are placed at the bottom, and Ga, In and Sn materials with higher boiling points are placed at the top to reduce volatilization during smelting. When the high-frequency induction furnace is evacuated to a vacuum degree of 5×10 -3 At Pa, backflush argon until the vacuum gauge reads -0.05 to -0.03Pa and then start melting; the melting temperature is about 425 degrees Celsius, and the melting time is about 1 minute. After melting, a homogeneo...

Embodiment 2

[0034] This embodiment discloses a Ga-In-Sn-Cd-Zn plasticine low-melting alloy whose general formula is GaInSnCdZn 1.5 .

[0035] The preparation method of the low-melting point alloy is as follows: Ga, In, Sn, Cd and Zn raw materials are weighed according to the designed molar ratio, wherein Ga, In, Sn, Cd, Zn are all selected as industrial-grade pure raw materials with a purity of more than 99 wt%, and then It adopts vacuum high-frequency induction furnace for vacuum melting. When smelting alloys, the volatile Cd and Zn raw materials are placed at the bottom, and the raw materials Ga, In and Sn are placed at the top to reduce volatilization. The high-frequency induction furnace is evacuated to a vacuum degree of 5×10 -3 At Pa, backflush argon until the reading of the vacuum gauge is -0.05Pa and then start melting; the melting temperature is about 425 degrees Celsius, and the melting time is about 1 minute. GaInSnCdZn can be freely deformed at room temperature 1.5 Alloys w...

Embodiment 3

[0038] This embodiment discloses a Ga-In-Sn-Cd-Zn plasticine low-melting alloy whose general formula is GaInSnCdZn 2.2 .

[0039] The preparation method of the low-melting point alloy of this embodiment is the same as that of Examples 1 and 2.

[0040] GaInSnCdZn that can be deformed arbitrarily at room temperature in this example 2.2 The 1000X scanning electron microscope structure picture of the low melting point alloy is as follows Figure 8 visible, Figure 8 It can be seen in GaInSnCdZn 2.2 The alloy is a mixture of multiphases with different colors, and it can be seen that the deformed alloy still has a pattern similar to river flow, which also shows that the deformation of the alloy is also a viscous flow deformation. Figure 9 GaInSnCdZn 2.2 From the DSC curve of the low melting point alloy, it can be seen from the curve that the alloy has a large phase transition peak at about 152.8°C, but it is not completely melted, and the melting point of the alloy should be ...

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Abstract

The invention provides low-melting-point alloy and a preparation method thereof. The general formula of the low-melting-point alloy is GaInxSnyCdzMt, wherein M is selected from Pb and / or Zn; x is larger than or equal to 0.5 and smaller than or equal to 2.5; y is larger than or equal to 0.5 and smaller than or equal to 2.5; z is larger than or equal to 1 and smaller than or equal to 3; t is larger than or equal to 1 and smaller than or equal to 3. The preparation method of the low-melting-point alloy includes the following steps that Ga, In, Sn, Cd, Pb and / or Zn are mixed in a specific sequence and then subjected to vacuum melting through a high-frequency induction furnace, and the low-melting-point alloy is obtained. The formula of the low-melting-point alloy is scientific and reasonable, and the preparation method of the low-melting-point alloy is simple and easy to implement. The low-melting-point alloy has the free-deformed property similar to that of plasticine in the room temperature environment and has low melting point and high conduction characteristics.

Description

technical field [0001] The invention relates to alloy technology, in particular to a low melting point alloy and a preparation method thereof. Background technique [0002] At present, the commonly used low-melting point alloys in industry are mainly bismuth-based alloys, which are mainly used in the field of mold materials, and their melting point range is between 47°C and 145°C, such as the commonly used Wood alloy (Bi 50 Pb 25 sn 12.5 Cd 12.5 , melting point 70°C) and Lipowitz alloy (Bi 50 Pb 27 sn 13 Cd 10 , melting point 70°C) and so on. However, since the volume of bismuth-based alloys shrinks when the bismuth content is lower than 45wt.%, and the volume is unchanged when the bismuth content is higher than 45wt.%, the bismuth content of these alloys is relatively high, so although the melting point of the alloy Low, but due to its relatively high strength, it cannot be deformed arbitrarily at room temperature like plasticine. [0003] The plasticine used in in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C30/06C22C30/04C22C30/00C22C1/02
CPCC22C1/02C22C30/00C22C30/04C22C30/06
Inventor 卢一平汤忠毅李廷举王同敏曹志强接金川康慧君
Owner DALIAN UNIV OF TECH
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