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Self-catalytic growth of large-sized β‑ga 2 o 3 microwire method

A large-scale, micron wire technology, applied in the field of autocatalytic growth of large-scale β-Ga2O3 micron wires, can solve the problems of waste of precious metal materials, complicated operations, and difficult to remove precious metals, and achieves lower production costs, simpler operations, and fewer substrates. The effect of pollution

Active Publication Date: 2017-04-19
南通全昂等离子体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing technology is not only complicated to operate, but also causes waste of precious metal materials, increasing the cost of β-Ga 2 o 3 The production cost of micro / nano wires also causes pollution to the substrate
In addition, a small amount remains in β-Ga 2 o 3 Precious metals in micro / nano are generally difficult to remove, which is not conducive to the fabrication of later nano devices

Method used

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  • Self-catalytic growth of large-sized β‑ga <sub>2</sub> o <sub>3</sub> microwire method
  • Self-catalytic growth of large-sized β‑ga <sub>2</sub> o <sub>3</sub> microwire method
  • Self-catalytic growth of large-sized β‑ga <sub>2</sub> o <sub>3</sub> microwire method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Proceed as follows:

[0016] a. Use gallium metal with a purity of 99.99% as the reaction source material, place the reaction source material in a quartz boat, and then put the quartz boat into the high-temperature heating zone in the quartz tube of the chemical vapor deposition equipment;

[0017] b. Control the pressure in the growth chamber at 10Pa, feed argon as the carrier gas, and the flow rate of argon is 60ml / min;

[0018] c. When the heating temperature reaches 1050°C, oxygen is introduced, the oxygen flow rate is 5ml / min, and the growth time is 30 minutes;

[0019] d. Turn off the oxygen, keep the argon flow, cool down to below 100°C, and take out the product.

[0020] The scanning electron micrograph of embodiment 1 gained product is as figure 1 shown.

Embodiment 2

[0022] Proceed as follows:

[0023] a. Use gallium metal with a purity of 99.99% as the reaction source material, place the reaction source material in a quartz boat, and then put the quartz boat into the high-temperature heating zone in the quartz tube of the chemical vapor deposition equipment;

[0024] b. Control the pressure in the growth chamber at 10Pa, feed argon as the carrier gas, and the flow rate of argon is 60ml / min;

[0025] c. When the heating temperature reaches 1050°C, oxygen is introduced, the oxygen flow rate is 10ml / min, and the growth time is 30 minutes;

[0026] d. Turn off the oxygen, keep the argon flow, cool down to below 100°C, and take out the product.

[0027] The scanning electron micrograph of embodiment 2 gained product is as figure 2 shown.

[0028] The energy dispersive spectrum of embodiment 2 gained product is as image 3 shown.

[0029] pass figure 1 , figure 2 It can be seen that the samples of Examples 1 and 2 of the present invent...

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Abstract

The invention discloses an autocatalysis growth method for a large-dimension beta-Ga2O3 microwire, and the method does not need catalysts, is simple to operate and good in repeatability, is capable of reducing manufacturing cost and reducing substrate pollution, and is beneficial for late-stage nanometer device manufacturing. The method comprises the following steps: taking a metal gallium elementary substance with the purity of at least 99% as a reaction source material, putting the reaction source material in a quartz boat, then putting the quartz boat in a high-temperature heating area in chemical vapor deposition equipment quartz tube; controlling the pressure in a growth chamber to be 10 Pa, introducing argon as a carrier gas, and controlling the argon flow to be 50-150 mL / min; introducing oxygen when the heating temperature reaches 800-1200 DEG C, controlling the oxygen flow to be 5-10 mL / min and the growth time to be 30 min; and turning off oxygen, keeping the argon flow, cooling to 100 DEG C or below, and taking out the product.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanomaterials, in particular a self-catalyzed growth of large-size β-Ga that does not require a catalyst, is simple to operate, has good repeatability, can reduce production costs and substrate pollution, and is beneficial to the production of nano devices in the later stage. 2 o 3 Microwire method. Background technique [0002] β-Ga 2 o 3 The material is an oxide semiconductor material with a direct bandgap, its forbidden band width can reach 4.9eV, and the corresponding absorption edge is in the solar blind zone (ultraviolet band with a wavelength less than 280nm), while β-Ga 2 o 3 The material also has excellent electrical, conductive and thermal stability properties, making it of high application value in the fields of optoelectronic devices, ultraviolet detectors and gas sensors. As we all know, compared with thin film materials, nano / micro materials have unique properties such as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00
Inventor 冯秋菊刘佳媛徐坤杨毓琪潘德柱李梦轲
Owner 南通全昂等离子体科技有限公司