Unlock instant, AI-driven research and patent intelligence for your innovation.

An in-situ stress detection device and detection method

An in-situ stress and detection device technology, which is applied in the direction of measuring the change force of the optical properties of the material when it is stressed, can solve the problems of large volume of anodic bonding machine, limited space, and inability to accommodate anodic bonding devices.

Active Publication Date: 2017-12-15
EAST CHINA UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although there is currently a close-to-real product-anodic bonding machine, the existing anodic bonding machine is too large to realize in-situ observation of the anodic bonding process
Existing in-situ reaction cells can only do in-situ research on trace chemical reaction substances, and the reaction conditions are generally related to temperature, gas phase, pressure, etc., and no in-situ reaction research involving electrical conditions has been seen.
In addition, the existing bonding machine has a large volume and limited space, and most of them use planar cathode anodic bonding, which cannot monitor the stress of the silicon wafer in real time during the anodic bonding process.
Raman spectroscopy is a feasible means to monitor the stress state of silicon wafers, but the working distance of its focusing lens is too short to accommodate existing anodic bonding devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An in-situ stress detection device and detection method
  • An in-situ stress detection device and detection method

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0048] Such as figure 1 , figure 2As shown, the main body of an in-situ stress detection device is a cylindrical cavity, and there are 6 interfaces on the side wall of the cavity, which are cooling water inlet 14, cooling water outlet 19, vacuum pump interface 15, vacuum gauge interface 16, thermoelectric Even interface 18 and power interface 17. There is a water-cooled jacket 7 in the side wall to facilitate cooling outside the cavity. The structure inside the cavity mainly includes: stainless steel sample stage 20, graphite paper 10, ceramic heating sheet 11, mica sheet 8, asbestos pad 9, thermocouple (not shown in the figure), point electrode 2 and electrode support rod. The asbestos pad 9 is placed on the bottom layer, and its main function is heat insulation; a mica sheet 8 is placed on it, and two circles of threaded holes are processed on the mica sheet 8. The outer ring threaded holes are used to fix the mica sheet 8 to the cavity, and the inner ring thread The hol...

specific Embodiment 2

[0056] The present invention also relates to a detection method that can use the above-mentioned in-situ stress detection device. Using the above-mentioned device, a Raman in-situ stress characterization experiment of silicon-glass anode bonding can be realized. Test method and steps:

[0057] Step 1. Clean the surface of the silicon wafer and the glass wafer used for anodic bonding, and gently attach them together to avoid gaps between the connecting surfaces;

[0058] Step 2, wipe the stainless steel sample stage of the above device with acetone and alcohol, rotate the point electrode and electrode support rod aside, place the silicon-glass sample on the sample stage with the glass on top. Then rotate and adjust the point electrode and electrode support rod to a suitable position to keep the point electrode in good contact with the glass surface;

[0059] Step 3, cover the flange cover, and adjust the position of the glass window to facilitate the focusing and observation o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of semiconductor detection, in particular to an in-situ stress detection device and a detection method thereof. By setting a transparent groove observation window on the upper cover of a bonding device, the stress state of the silicon chip interface during the bonding process can be monitored. Conduct real-time monitoring to study the cause of stress, the relationship between stress and anodic bonding conditions (temperature, pressure, energization time), and provide guidance for controlling the stress of silicon wafers during anodic bonding, thereby improving the bonding structure. structural integrity. At the same time, the application of in-situ laser Raman spectroscopy to study the stress of silicon-glass anodic bonding is also a new method.

Description

technical field [0001] The invention relates to the field of semiconductor detection, in particular to an in-situ stress detection device and a detection method. Background technique [0002] At present, the in-situ characterization technology of chemical reactions based on laser Raman spectroscopy is widely used, and one of the key devices is the in-situ reaction cell. The in-situ reaction cell generally includes a detachable sample cell, a glass window, a sealed structure, a heating and cooling system, and the like. It can realize in-situ monitoring of gas, solid and liquid reactions under high temperature and high pressure conditions. [0003] Although there is currently a close-to-real product—anodic bonding machine, the existing anodic bonding machine has a large volume and cannot realize in-situ observation of the anodic bonding process. Existing in-situ reaction cells can only do in-situ research on trace chemical reaction substances, and the reaction conditions are...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/24
Inventor 于新海明小祥唐佳丽徐小五涂善东
Owner EAST CHINA UNIV OF SCI & TECH