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A short-circuited anode lateral insulated gate bipolar transistor

An anode and lateral technology, applied in the direction of circuits, semiconductor devices, electrical components, etc., can solve problems that affect the stability of power electronic systems and devices cannot be turned on normally, so as to improve the off-state characteristics and anti-latch-up ability, and suppress the snapback phenomenon Effect

Active Publication Date: 2018-04-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the traditional SA-IGBT, the snapback phenomenon will appear during the transition from unipolar mode to bipolar mode, and the snapback phenomenon will be more obvious under low temperature conditions, which will cause the device to fail to turn on normally and seriously affect the power electronic system. stability

Method used

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  • A short-circuited anode lateral insulated gate bipolar transistor
  • A short-circuited anode lateral insulated gate bipolar transistor
  • A short-circuited anode lateral insulated gate bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as figure 2 As shown, it includes an N-type substrate 1, a dielectric layer 2 located on the upper surface of the N-type substrate, and an N-type drift region 3 located on the upper surface of the dielectric layer 2; the upper side of the N-type drift region 3 has a P-type well region 4, the other side has an N-type well region 5; the upper layer of the P-type well region 4 has a P+ body contact region 8 and an N+ cathode region 9, and the P+ body contact region 8 and N+ cathode region 9 are juxtaposed along the lateral direction of the device set, and the N+ cathode region 9 is located on the side close to the N-type well region 5; the upper surface of the P-type well region 4 between the N+ cathode region 9 and the N-type drift region 3 has a gate structure; it is characterized in that, The upper layer of the N-type well region 5 has a P+ anode region 10 and an N+ anode region 11, and the P+ anode region 10 is located on a side close to the P-type well region 4;...

Embodiment 2

[0034] Such as image 3 As shown, the structure of this example is basically the same as that of the embodiment, except that in this example, the N+ anode region 11 is separated from a row of adjacent P+ anode subregions.

[0035] The principles and beneficial effects of this embodiment are the same as those of Embodiment 1, but another implementation manner is provided.

Embodiment 3

[0037] Such as Figure 4 As shown, the structure of this example is basically the same as that of Example 2. The difference is that in this example, the P+ anode region 10 includes three columns, which are respectively the first row of P+ anode subregions, the second row of P+ anode subregions and the third row of P+ anode subregions. Row P+ anode sub-region; the distance between the first row P+ anode sub-region and the second row P+ anode sub-region is m1, the distance between the second row P+ anode sub-region and the third row P+ anode sub-region The pitch is m2; the first row of P+ anode sub-regions is divided into two sections along the longitudinal direction of the device, which are respectively the first row of the first segment of the P+ anode sub-region and the first row of the second segment of the P+ anode sub-region, the first The first column of the P+ anode sub-region is located on one side of the device along the longitudinal direction of the device, the second...

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PUM

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Abstract

The invention belongs to the technical field of semiconductors, and in particular relates to a SA‑LIGBT. The main scheme of the present invention is that the P+ anode region and the N+ anode region inside the N-type well region in the present invention, and the P+ anode region and the N+ anode region are respectively composed of multiple rows of P+ anode sub-regions and N+ anode regions parallel to each other along the lateral direction of the device. The sub-regions are composed of a segmented structure along the longitudinal direction of the device; at the same time, the P+ anode region and the N+ anode region are in contact with a P-type buried layer. When the device is in the unipolar mode at the beginning of the forward conduction, the P-type buried layer and the P+ anode region form an electron blocking layer, which can prevent the electrons emitted from the cathode from being collected by the N+ anode region, thereby increasing the P+ anode region in the unipolar mode The forward voltage drop of the PN junction formed by the P-type first buried layer and the N-type well region or the N-type high-resistance region enables the device to enter the bipolar mode under a small unipolar current, thereby suppressing the snapback phenomenon Appear. The beneficial effect of the invention is that the snapback phenomenon can be effectively suppressed, and at the same time, the off-state characteristics of the device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and specifically relates to a SA-LIGBT (Short Anode IGBT, Short Anode-Lateral Insulated Gate Bipolar Transistor, short-circuited anode lateral insulated gate bipolar transistor). Background technique [0002] Compared with the previous BJT and MOSFET devices, the biggest difference between the insulated gate bipolar transistor (IGBT) is that it has a conductance modulation effect during forward conduction, so that it can maintain a high withstand voltage while having a low positive voltage. lead-through voltage drop. However, the negative effect brought about by this is that a large amount of plasma is stored in the drift region of the IGBT before the device is turned off, which makes the turn-off loss of the IGBT very large. SA-LIGBT (Short Anode LIGBT) solves this problem well by providing a low-resistance discharge channel for excess electrons in the drift region. [0003] Such as fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/739
CPCH01L29/0684H01L29/0692H01L29/7394
Inventor 罗小蓉阮新亮周坤邓高强魏杰吴俊峰邓思宇张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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