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Laser based on semiconductor interface heterogeneous joint structure

A heterogeneous junction and semiconductor technology, applied in semiconductor lasers, lasers, laser components, etc., can solve problems such as poor high-temperature performance and complicated manufacturing process, and achieve stable high-temperature performance, simple manufacturing process, and high luminous power.

Inactive Publication Date: 2016-05-11
FUJIAN Z K LITECORE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The most commonly used laser material for 1064nm band lasers is the InGaAsP / InP system. The disadvantages of this system are poor high temperature performance and complicated manufacturing process.

Method used

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  • Laser based on semiconductor interface heterogeneous joint structure
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specific Embodiment approach 1

[0027] refer to figure 1 , consisting of a lower electrode 1, a substrate 2, a lower contact layer 3, an active layer 4, a cover layer 5, an upper contact layer 6, a dielectric film layer 7, and an upper electrode 8 arranged from bottom to top, and the active area is InP / InAlAs single heterojunction. According to the pre-designed epitaxial structure, the epitaxial layer is grown by MOCVD or MBE.

[0028] The specific steps are: first grow a lower contact layer 3 that is homogeneous with the substrate material and doped on the InP substrate 2, and then grow the core part of this patent: the InP / InAlAs heterojunction active region 4, where the thickness of the InP layer is The thickness of the InAlAs layer is 20-40nm, the InAlAs layer is lattice-matched to the InP layer, so that the two-dimensional electron gas emission center wavelength of the heterojunction interface is at 1064nm, and then the capping layer 5 is grown, and the doped upper contact Layer 6. The above-mention...

specific Embodiment approach 2

[0029] refer to figure 2 , consisting of a lower electrode 1, a substrate 2, a lower contact layer 3, an active layer 4, a cover layer 5, an upper contact layer 6, a dielectric film layer 7, and an upper electrode 8 arranged from bottom to top, and the active area is [InP / InAlAs] Repeat multiple heterojunctions, the heterojunction period is 40-80nm. According to the pre-designed epitaxial structure, the epitaxial layer is grown by MOCVD or MBE.

[0030] The specific steps are: first grow a lower contact layer 3 that is homogeneous with the substrate material and doped on the InP substrate 2, and then grow the core part of this patent: the InP / InAlAs heterojunction active region 4, where the thickness of the InP layer is The thickness of the InAlAs layer is 20-40nm, the InAlAs layer is lattice-matched to the InP layer, so that the two-dimensional electron gas emission center wavelength of the heterojunction interface is at 1064nm, and the InP / InAlAs heterojunction is repeate...

specific Embodiment approach 3

[0031] refer to figure 2 , consisting of a lower electrode 1, a substrate 2, a lower contact layer 3, an active layer 4, a cover layer 5, an upper contact layer 6, a dielectric film layer 7, and an upper electrode 8 arranged from bottom to top, and the active area is [InP / InAlAs] Repeat multiple heterojunctions, the heterojunction period is greater than 80nm. According to the pre-designed epitaxial structure, the epitaxial layer is grown by MOCVD or MBE.

[0032] The specific steps are: first grow a lower contact layer 3 that is homogeneous with the substrate material and doped on the InP substrate 2, and then grow the core part of this patent: the InP / InAlAs heterojunction active region 4, where the thickness of the InP layer is The thickness of the InAlAs layer is greater than 40nm, and the InAlAs layer is lattice-matched to the InP layer. In this way, the InP / InAlAs heterojunction is repeatedly grown. The two-dimensional electron gas emission center wavelength of the het...

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Abstract

The invention provides a laser based on a semiconductor interface heterogeneous joint structure. The laser comprises a lower electrode, an underlay, a lower contact layer, an active layer, an upper contact layer, a cover layer, a dielectric film layer and an upper electrode which are arranged successively. The active layer is the semiconductor heterogeneous joint structure; according to the semiconductor heterogeneous joint structure, one side of the heterogeneous joint structure is a material homogeneous with the underlay; the other side of the heterogeneous joint is a material with the same lattice constant to that of the underlay and with the band gap width different from that of the underlay. The laser is featured by high output power and stable preparation technology and has distinctive application prospects in the high technology fields such as laser ranging, laser guidance, coherent communication, atmosphere research, medical apparatus and instruments, optical image processing and laser printers.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a laser based on a semiconductor heterojunction structure. Background technique [0002] Laser is one of the major inventions in modern science and technology. 1064nm band lasers have unique application prospects in high-tech fields such as laser ranging, laser guidance, coherent communication, atmospheric research, medical equipment, optical image processing, and laser printers. In the middle and late 1970s, people conducted multi-faceted exploration and research on how to improve the output power and efficiency of 1064nm band lasers from materials, devices to structures, which prompted people to improve efficiency, [0003] In-depth research and development in terms of miniaturization and stable performance. [0004] At this stage, most solid-state lasers use semiconductor laser or diode array pumping technology, which has its own advantages: long working time, low power consumption, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/323
CPCH01S5/323
Inventor 苏辉陈阳华林中晞林琦
Owner FUJIAN Z K LITECORE LTD