Ion beam irradiation apparatus, and ion beam current homogenization method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- NISSIN ION EQUIP CO LTD
- Publication Date
- 2016-05-25
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Abstract
Description
technical field
[0001] The present invention relates to an ion beam irradiation device and the like for irradiating an ion beam to a wafer or the like. Background technique
[0002] For example, in the manufacturing process of liquid crystal displays and semiconductor devices, ion beam irradiation equipment is used to inject impurity substances such as phosphorus (P) and boron (B) into processed objects such as liquid crystal glass substrates and semiconductor substrates.
[0003] The ion source used in such an ion beam irradiation device includes a plasma generating container in which plasma is generated, and a plurality of filaments provided inside the plasma generating container, and is heated by passing an electric current through each of the filaments to release heat. The electrons collide with the material gas molecules in the plasma generation container to generate plasma, and the plasma is extracted by the extraction electrode system and accelerated into an ion beam....