Rapid annealing preparation method of Al-Si<+> ohmic contact electrode

A technology of rapid annealing and ohmic contact electrodes, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve the problem of weakening the influence of work function on ohmic contact, achieve efficient and rapid preparation, simple equipment, needle The effect of fewer holes

Inactive Publication Date: 2016-05-25
YUNNAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, due to the influence of the surface state, the influence of the work function on the formation of ohmic contacts is weakened. For n-type semiconductors, even if Wm

Method used

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  • Rapid annealing preparation method of Al-Si&lt;+&gt; ohmic contact electrode
  • Rapid annealing preparation method of Al-Si&lt;+&gt; ohmic contact electrode
  • Rapid annealing preparation method of Al-Si&lt;+&gt; ohmic contact electrode

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Embodiment Construction

[0016] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0017] figure 1 The operation process of middle embodiment A is as follows:

[0018] 1. Ultrasonic for 5 min at room temperature with analytical grade acetone, rinse with deionized water. Repeat this step 3 times.

[0019] 2. Sonicate with absolute ethanol at room temperature for 5 min, and rinse with deionized water. Repeat this step 3 times.

[0020] 3. Concentrate H first 2 SO 4 (98%): H 2 O 2 =2:1 mixed solution, boil for 3-5min, rinse with deionized water for 2-3 times, then use HF(10%):H 2 Soak in the mixed solution of O=1:10 for 30s and rinse with deionized water for 2-3 times.

[0021] 4. Concentrate HNO first 3 Boil for 3min, rinse 2-3 times with deionized water, then use HF (10%):H 2 Soak in the mixed solution of O=1:10 for 30s and rinse with deionized water for 2-3 times. Repeat this step 2 times.

[0022] 5. Concentrate HNO fir...

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Abstract

The invention relates to a magnetron sputtering combined rapid annealing high-efficiency preparation method of an Al-Si<+> ohmic contact electrode, belonging to the technical field of semiconductor preparation. The preparation method comprises the following steps: based an ultrahigh vacuum magnetron sputtering technology, firstly growing an Al film with a certain thickness at a certain temperature by using the magnetron sputtering technology at the vacuum degree of 3.0*10<-4>Pa in the presence of Ar gas serving as working gas; and then carrying out rapid annealing treatment on the Al film by using a rapid annealing furnace to obtain the Al-Si<+> ohmic contact electrode. With adoption of the method, the preparation of the Al-Si<+> ohmic contact electrode is sped up; the defects existing in a vacuum evaporation method and an electron beam evaporation method that only low-melting-point and high-vapor-pressure elements and compounds can be sputtered, the adhesive of a sputtered film to a substrate is poor, and the density of the sputtered film is low can be overcome; the obtained Al-Si<+> ohmic contact electrode has the advantages of high film purity, easy control in film coating, high deposition rate, large film coating area, good linear contact and good stability; in addition, equipment is simple, and use and maintenance costs are low. Therefore, the method is a simple and efficient Al-Si<+> ohmic contact electrode preparation method which can be put into industrial generalization easily.

Description

technical field [0001] The invention relates to a preparation method of semiconductor electrode materials, in particular to preparation of Al-Si by means of rapid annealing + Ohmic contact electrode technology, based on low temperature Al film prepared by DC magnetron sputtering, low temperature sputtering on Si + The on-chip Al film is placed in a rapid annealing furnace for efficient preparation of Al-Si + Preparation method of ohmic contact electrode. Background technique [0002] Ohmic contact is a semiconductor device with a linear and symmetrical current-voltage characteristic curve ( I-V curve) area. If the current-voltage characteristic curve is non-linear, then this contact is called Schottky contact. Typical ohmic contacts are sputtered or evaporated metal sheets. Ohmic contacts with low resistance and stable contact are the key factors affecting the performance and stability of integrated circuits. Their preparation is the main work of circuit manufacturing. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/324H01L21/203C23C14/35H01L29/45
CPCH01L21/28C23C14/35H01L21/324H01L29/456
Inventor 杨宇迟庆斌舒启江王茺王荣飞杨杰
Owner YUNNAN UNIV
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