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A kind of ECR ​​plasma sputtering device and sputtering method thereof

A plasma and sputtering device technology, which is applied in the field of plasma surface sputtering devices, can solve the problems such as the substrate is not placed and the charged particles cannot be formed into a film.

Active Publication Date: 2018-02-13
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the deficiencies in the prior art above, the object of the present invention is to provide an ECR plasma sputtering device and a sputtering method thereof, aiming at solving the problem that the substrate in the prior art is not placed in both closed and divergent magnetic fields. Suitable position, the problem of not being able to form a film under the suitable charged particle irradiation conditions

Method used

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  • A kind of ECR ​​plasma sputtering device and sputtering method thereof
  • A kind of ECR ​​plasma sputtering device and sputtering method thereof
  • A kind of ECR ​​plasma sputtering device and sputtering method thereof

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Effect test

Embodiment 1

[0040] Electron cyclotron resonance (ECR) plasma generates high-density plasma through the combined action of magnetic coil current and microwaves. Generally, the ECR plasma in the microwave generator 1 uses 2.45 GHz microwaves, so the magnetic field strength of 875 G is a resonant magnetic field. In the resonant magnetic field region, electrons undergo cyclotron acceleration to excite more atom ionization, and obtain a plasma with high ionization rate and high density. In order to increase the irradiation energy of electrons or ions required to sputter one atom, the film formation rate should be increased as much as possible. Therefore, it is most appropriate to place the cylindrical fixed target 6 in the area with the highest plasma density, that is, the resonant magnetic field. However, if the cylindrical fixed target 6 is placed at the resonant magnetic field in the plasma chamber 5, it will cause microwave leakage. Therefore, by adjusting the current of the magnetic coil...

Embodiment 2

[0042] Put the substrate 7 into the film-forming chamber 8, when the vacuum degree in the plasma chamber 5 and the film-forming chamber 8 reaches 5×10 -5 After Pa, argon is introduced to raise the pressure in the vacuum chamber to 4×10 -2 Pa, by applying current to the first magnetic coil 2, the second magnetic coil 3 outside the plasma chamber 5, and the third magnetic coil 4 outside the film-forming chamber, a closed magnetic field is formed in the plasma chamber 5, and the magnetic field and the microwave Under the coupling effect, the electrons gyrate and ionize the argon gas to generate plasma. Gauss meters are used to measure the magnetic field distribution in the plasma chamber 5 and the film forming chamber 8, and the magnetic field strength of 875 G is the resonant magnetic field. When the current in the first magnetic coil 2 and the second magnetic coil 3 is 40 A, the cylindrical fixed target 6 is located in the film forming chamber 8 at the leftmost position adja...

Embodiment 3

[0044] Put the substrate 7 into the film-forming chamber 8, when the vacuum degree in the plasma chamber 5 and the film-forming chamber 8 reaches 5×10 -5 After Pa, feed argon, make the air pressure in the pre-vacuum chamber 18 rise to 4 * 10 -2 Pa, by applying current to the first magnetic coil 2 and the second magnetic coil 3 outside the plasma chamber 5, a closed magnetic field is formed in the plasma chamber 5, and under the coupling effect of the magnetic field and the microwave, the electrons rotate and the argon gas is ionized. , generating plasma. Gauss meters are used to measure the magnetic field distribution in the plasma chamber 5 and the film forming chamber 8, and the magnetic field strength of 875 G is the resonant magnetic field. When the current in the first magnetic coil 2 and the second magnetic coil 3 is 40A, the position of the cylindrical fixed target 6 relative to the resonant magnetic field in the plasma chamber 5 remains unchanged, as Figure 3a and...

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Abstract

The invention provides an ECR plasma sputtering device and a sputtering method thereof. The ECR plasma sputtering device comprises a microwave generator, a plasma chamber, a film forming chamber and a pre-vacuum chamber arranged in sequence from left to right; the microwave generator is connected with the plasma chamber through a microwave guide pipe and a quartz window in sequence; a first magnetic coil and a second magnetic coil are arranged on the outer side of the plasma chamber; a third magnetic coil is arranged on the outer side of the film forming chamber; a cylindrical fixed target is arranged in an electron cyclotron resonance magnetic field on the right side of the plasma chamber and at the end, near the plasma chamber, of the film forming chamber; a basal plate is arranged at the end, near the pre-vacuum chamber, of the film forming chamber; and the cylindrical fixed target is grounded through a target power supply. The ECR plasma sputtering device can obtain stable plasma and the best electron and ion irradiation effect under two magnetic field molds, i.e., closed and scattered magnetic field modes, through determining the position relation of the cylindrical fixed target and the basal plate in the film forming chamber.

Description

technical field [0001] The invention relates to the technical field of plasma surface sputtering devices, in particular to an ECR plasma sputtering device and a sputtering method thereof. Background technique [0002] The Electron cyclotron resonance (ECR) plasma sputtering device can irradiate high-density plasma onto the substrate to process the surface and obtain a thin film with excellent characteristics. In previous ECR sputtering devices, the magnetic field modes of the film forming chamber can be divided into three types: closed type, divergent type and convergent type. [0003] The intermediate magnetic field strength of the cusp magnetic field is zero, and it cannot be used alone for the preparation of thin films. It must be used in combination with other sputtering methods, so it is hardly used. In the closed magnetic field, the central magnetic field of the plasma source is weak, and the magnetic fields on both sides are strong, and the charged particles are encl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
CPCC23C14/357
Inventor 刁东风范雪陈成
Owner SHENZHEN UNIV
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