Dual polycrystal self-aligned complementary bipolar device structure and fabrication method thereof

Abstract

The invention provides a dual polycrystal self-aligned complementary bipolar device structure and a fabrication method thereof. Process development of a 0.35micron technology node is achieved under the condition of a 6inch process line, namely on the process line of photoetching the technology node with the minimum linewidth of 0.5micron; fabrication of a complementary bipolar process device which can only be achieved under a higher technology level is achieved under the premise of not increasing equipment budget of the higher technology level of the 6inch process line; the actual minimum process dimension reaches 0.3-0.35micron; the device performance is not reduced, namely various technical indexes of a device all reach the technology level under the 0.35micron technology node and the characteristic frequency of the device employing an NPN tube and a PNP tube reaches the magnitude of gigahertz; and on the basis of high structure symmetry of the longitudinal NPN tube and PNP tube and high symmetry of device characteristics, a technology platform and an important guarantee are provided for improving the design capability of a push-pull circuit. Due to the adoption of the 6inch process line, the actual process fabrication cost is effectively reduced.

Description

technical field [0001] The invention belongs to the field of complementary bipolar transistor devices, and in particular relates to a double-polycrystalline self-aligned complementary bipolar device structure and a manufacturing method thereof. Background technique [0002] like figure 1 Shown is a schematic cross-sectional structure diagram of an existing conventional double polycrystalline self-aligned complementary bipolar transistor, which mainly includes a single crystal silicon substrate, a deep trench dielectric isolation structure, a buried layer structure, an epitaxial structure, and a local oxide layer (LOCOS) structure, Extrinsic base structure, intrinsic base structure and emitter structure, etc. [0003] Bipolar transistors have important applications in analog and mixed-signal integrated circuits (ICs) due to their excellent current drive capability, linearity and good matching. The dual polycrystalline self-aligned complementary bipolar process is an advance...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the technical problems of huge investment and high cost in the advanced semiconductor chip processing service factory in the prior art, the present invention provides a double-poly self-aligning chip that can realize the next-level higher technology node designed for the capacity of the ordinary 6-inch process line. The fabrication method of the quasi-complementary bipolar process device structure, so as to realize the advanced device structure fabrication that can only be realized by the high-tech node process capability without increasing the technical investment of the production line

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