Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Formation method of trench isolation structure

A trench isolation and trench technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor isolation effect and performance degradation of semiconductor devices, and achieve increased contact area, improved performance, increased The effect of high operating current

Active Publication Date: 2016-06-08
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the isolation effect of the existing shallow trench isolation structure is not good, and it is easy to cause the performance degradation of the semiconductor device formed on the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of trench isolation structure
  • Formation method of trench isolation structure
  • Formation method of trench isolation structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] As mentioned in the background art, the isolation effect of the existing shallow trench isolation structure is not good, which easily causes performance degradation of semiconductor devices formed on the substrate.

[0035] After research, please continue to refer to figure 1 Since the substrate 100 on both sides of the shallow trench isolation structure is an active region, the surface of the substrate 100 is used to form a semiconductor device, and ion doping needs to be carried out in the substrate 100 to form a well region and The source and drain regions, and the doping ion types of the well region and the source and drain regions are opposite, so it is easy to form a parasitic diode in the substrate 100 surrounding the top of the shallow trench isolation structure, and the parasitic diode will affect the subsequent formation of the substrate 100. The performance of the semiconductor device on the bottom 100 and the surface of the shallow trench isolation structure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Doping concentrationaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a formation method of a trench isolation structure. The formation method comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a mask layer, and the mask layer exposes a part of the surface of the substrate; etching the substrate by taking the mask layer as a mask, and forming a trench in the substrate; forming a laying at the side wall of the trench and the surface of the bottom; after the laying is formed, etching the side wall of the mask layer to expose a part of the substrate surface around the trench; after the side wall of the mask layer is etched, by taking the mask layer and the laying as masks, doping modified ions on the surface of the exposed substrate, and forming a barrier layer on the surface of the exposed substrate, wherein the barrier layer is disposed at the substrate surface surrounding the top of the trench; and after the barrier layer is formed, forming an isolation layer fully filling the trench on the surface of the laying. The isolation effect of the formed trench isolation structure is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a trench isolation structure. Background technique [0002] The development direction of semiconductor integrated circuits is to increase density and shrink components. In the integrated circuit manufacturing technology, the isolation structure is an important technology, and the components formed on the semiconductor substrate adopt the isolation structure to isolate each other. With the advancement of semiconductor manufacturing technology, shallow trench isolation (Shallow Trench Isolation, referred to as STI) technology has gradually replaced the traditional semiconductor device manufacturing technology due to its good isolation effect and simple manufacturing process, such as local oxidation of silicon (LOCOS), etc. A commonly used isolation structure formed by a process. [0003] Shallow trench isolation structures are used for dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/762
Inventor 赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com