Low temperature polysilicon thin film transistor and its manufacturing method

A technology of thin-film transistors and low-temperature polysilicon, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of abnormal electrical properties of TFT devices, unsatisfactory activation and hydrogenation effects, etc., so as to improve utilization rate and hydrogenation effect, the effect of increasing the activation effect
CN105655404BActive Publication Date: 2019-07-26WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Publication Date
2019-07-26

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Abstract

The invention relates to a low-temperature polycrystalline silicon thin film transistor and a preparation method thereof. The method comprises the following steps: providing a substrate; depositing a buffering layer and a non-crystalline silicon layer on the substrate in sequence, and performing laser radiation to change the non-crystalline silicon layer into a polycrystalline silicon layer which is an active layer; depositing a first grid insulating layer, a second grid insulating layer and a first metal layer on the buffering layer and the active layer in sequence, performing high-temperature activation, and photoetching and etching the first metal layer to form a grid; depositing dielectric layers on the grid insulating layers and the grid; depositing first contact holes and second contact holes in the dielectric layers, the first grid insulating layer and the second grid insulating layer; and respectively depositing source electrodes and drain electrodes on the first contact holes and the second contact holes. The thin film transistor prepared by the method can effectively overcome the structural defects of polycrystalline silicon, and the performance of the thin film transistor can be improved.
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Description

technical field

[0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon thin film transistor and a manufacturing method thereof. Background technique

[0002] Thin Film Transistor (TFT, Thin Film Transistor) is used as a switching element in liquid crystal display devices. It has the characteristics of low power consumption, small volume and low driving voltage, and is very suitable for computers, notebooks and other devices. display screen. In the current liquid crystal display device, the active layer of the thin film transistor is mainly made of amorphous silicon (a-Si), but the mobility of the thin film transistor using amorphous silicon as the active layer is very low, and it is difficult to meet the driving requirements of the peripheral circuit. Therefore, the technology of using low temperature polysilicon (Low Temperature Poly-silicon, LTPS) instead of amorphous silicon emerges as the times require.

[0003] ...

Claims

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