Passivation layer deposition method of high-voltage LED chip

Abstract

The invention provides a passivation layer deposition method of a high-voltage LED chip. The method comprises the following steps: a passivation layer deposition step, i.e., depositing an SiO2 passivation layer on the whole surface of an LED chip obtained after an isolation groove etching process is completed; a passivation layer removing step, i.e., removing the SiO2 passivation layer of other areas apart from a preset non-corrosion area, wherein the non-corrosion area comprises the side wall of an isolation groove and an area, adjacent to the side wall, of the bottom surface of the isolation groove; and alternatively performing the passivation layer deposition step and the passivation layer removing step for multiple times, and enabling the width of the non-corrosion area on a profile to be successively increased as the alternating frequency increases. According to the passivation layer deposition method of the high-voltage LED chip, provided by the invention, the inclination angle of the side wall of the chip can be reduced, bridge disconnection can be prevented during vapor plating of an electrode connection bridge, and accordingly, the yield rate of the high-voltage LED chip can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a high-voltage LED core [0002] Chip passivation layer deposition method. Background technique [0003] Light Emitting Diode (LED) is gradually becoming the mainstream lighting source in the traditional lighting market due to its advantages of high luminous efficiency, low energy consumption, long life, and non-toxic green. Many applications. High-Voltage LED (High-Voltage LED) has gradually become a new breakthrough in the lighting field due to its advantages of small current drive and simple drive circuit design. In a broad sense, high-voltage LED refers to the method of dividing the epitaxial layer of a large-size chip (generally 45*45mil) into multiple independent core particles by etching deep trenches, and connecting bridges through evaporation electrodes. The LED chip formed by connecting each chip in series, because the voltage of a single chip is 3V ...

AI Technical Summary

Problems solved by technology

[0010] In the actual production process, bridge breakage often occurs when evaporating electrode connection bridges, which affects the yield of high-voltage LED chips. The side wall is relatively steep, which makes it impossible for the electrode connection bridge 7 to "climb" to the slightly higher P electrode during the process of evaporating the electrode connection bridge 7

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