Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of etching polycrystalline silicon sheet cut by diamond wire

A technology of diamond wire cutting and polysilicon wafers, which is applied in the fields of chemical instruments and methods, crystal growth, and final product manufacturing. It can solve the problems of low reflectivity and low conversion efficiency, improve conversion efficiency, save costs, and simplify process operations. Effect

Active Publication Date: 2016-06-15
YANCHENG CANADIAN SOLAR INC
View PDF8 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, compared with mortar-cut silicon wafers, if diamond wire-cut polycrystalline silicon wafers are used to prepare the textured surface by the acid texturing process widely used by battery manufacturers, the cut polycrystalline silicon wafers are generally used directly with conventional HNO 3 / HF texturing system texturing treatment, due to the thinner damaged layer on the surface of the polysilicon wafer cut by diamond wire and fewer defects, conventional HNO 3 The / HF texturing system cannot produce a textured surface with a low reflectivity on diamond wire-cut polysilicon wafers, and the reflectivity of the prepared textured surface reaches 28-30%. Due to the high reflectivity, the prepared cell sheet The conversion efficiency is more than 0.2% lower than that of polysilicon wafers cut by mortar wire

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of etching polycrystalline silicon sheet cut by diamond wire
  • Method of etching polycrystalline silicon sheet cut by diamond wire
  • Method of etching polycrystalline silicon sheet cut by diamond wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Such as figure 1 Shown, a kind of method for making texture of diamond wire-cut polysilicon wafer, comprises the following steps:

[0025] Step 1): pretreatment, cleaning the polysilicon wafer cut by diamond wire, and drying after cleaning; wherein, the cleaning in the step 1) is RCA solution cleaning, and the NH in the RCA solution 4 OH, H 2 o 2 、H 2 The volume ratio of O is 1:1:5; the drying in the step 1) is specifically: the water on the surface of the silicon wafer is removed by the surface tension of the DI water with high cleanliness (the resistivity is greater than 16MΩ) after heating. The top of the polysilicon wafer is dried by blowing clean air at 80°C downward.

[0026] Step 2): heat treatment, performing heat treatment on the polycrystalline silicon wafer treated in the step 1); wherein, the heating temperature of the heat treatment in the step 2) is 700° C., and the heating time is 50 s.

[0027] Step 3): Texturing, putting the polycrystalline silicon...

Embodiment 2

[0029] Such as figure 1 Shown, a kind of method for making texture of diamond wire-cut polysilicon wafer, comprises the following steps:

[0030] Step 1): pretreatment, cleaning the polysilicon wafer cut by diamond wire, and drying after cleaning; wherein, the cleaning in the step 1) is RCA solution cleaning, and the NH in the RCA solution 4 OH, H 2 o 2 、H 2The volume ratio of O is 1:1:5; the drying in the step 1) is specifically: the water on the surface of the silicon wafer is removed by the surface tension of the DI water with high cleanliness (the resistivity is greater than 16MΩ) after heating. The top of the polysilicon wafer is blown down with clean air at 90°C for drying.

[0031] Step 2): heat treatment, performing heat treatment on the polycrystalline silicon wafer treated in the step 1); wherein, the heating temperature of the heat treatment in the step 2) is 900° C., and the heating time is 600 s.

[0032] Step 3): Texturing, putting the polycrystalline silico...

Embodiment 3

[0034] Such as figure 1 Shown, a kind of method for making texture of diamond wire-cut polysilicon wafer, comprises the following steps:

[0035] Step 1): pretreatment, cleaning the polysilicon wafer cut by diamond wire, and drying after cleaning; wherein, the cleaning in the step 1) is RCA solution cleaning, and the NH in the RCA solution 4 OH, H 2 o 2 、H 2 The volume ratio of O is 1:1:5; the drying in the step 1) is specifically: the water on the surface of the silicon wafer is removed by the surface tension of the DI water with high cleanliness (the resistivity is greater than 16MΩ) after heating. The top of the polysilicon wafer is dried by blowing clean air at 95°C downward.

[0036] Step 2): heat treatment, performing heat treatment on the polycrystalline silicon wafer treated in the step 1); wherein, the heating temperature of the heat treatment in the step 2) is 800° C., and the heating time is 300 s.

[0037] Step 3): Texturing, putting the polycrystalline silico...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method of etching a polycrystalline silicon sheet cut by a diamond wire. The method comprises a first step of pretreatment in which the polycrystalline silicon sheet cut by the diamond wire is cleaned and dried after cleaning, a second step of heating treatment in which heating treatment is carried out on the polycrystalline silicon sheet after treatment in the first step, and a third step of etching in which the polycrystalline silicon sheet after treatment in the second step is put in an acid mixed solution for etching, and a polycrystalline silicon sheet after etching is obtained. Thus, the reflectivity of the polycrystalline silicon sheet cut by the diamond wire can be effectively reduced, and the conversion efficiency of a cell after etching is improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing polycrystalline silicon solar cells, in particular to a method for making texture of diamond wire-cut polycrystalline silicon wafers. Background technique [0002] The existing polycrystalline silicon ingot slicing manufacturers have widely used the mortar cutting process in large-scale production. Compared with the mortar cutting method, the diamond wire cutting polycrystalline silicon ingot slicing method is more environmentally friendly and has a greater reduction It has the advantages of cost space and greater space to improve the efficiency of polysilicon cells, which has attracted the attention of the majority of slicing manufacturers. [0003] However, compared with mortar-cut silicon wafers, if diamond wire-cut polycrystalline silicon wafers are used to prepare the textured surface using the acid texturing process widely used by battery manufacturers, the cut polycrystalline silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/10
CPCC30B33/10H01L31/182Y02P70/50
Inventor 周军党继东刘东续
Owner YANCHENG CANADIAN SOLAR INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com