Preparing method for cuprous sulfide nanosheets

A technology of cuprous sulfide and nanosheets, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of lack of high-quality two-dimensional cuprous sulfide, etc., and achieve the goal of promoting commercialization. The process is simple and the effect of high flatness

Inactive Publication Date: 2016-06-29
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0002] Cuprous sulfide is a semiconductor material with a bandgap of 1.2eV, which can be used to store information, supercapacitors, Li-ion batteries, solar cells, and photovoltaic devices. Nowadays, there are many ways to prepare cuprous sulfide, For example, preparation methods such as hydrothermal-solvothermal method, sol-gel method and magnetron sputtering, but there is currently a lack of a method for preparing high-quality two-dimensional cuprous sulfide; based on this background, the applicant utilizes atmospheric pressure chemical vapor deposition The method prepared high-quality two-dimensional cuprous sulfide nanosheets; and used the prepared cuprous sulfide nanosheets to test XRD. After experiments, it was found that the β phase to γ ​​phase transition of cuprous sulfide nanosheets was close to room temperature, which is very conducive to industrial promotion

Method used

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  • Preparing method for cuprous sulfide nanosheets
  • Preparing method for cuprous sulfide nanosheets

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Experimental program
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Effect test

Embodiment 1

[0019] Embodiment 1: a kind of preparation method of cuprous sulfide nano sheet, comprises the following steps:

[0020] Step a, put S i o 2 / S i The substrate is cleaned; then the Cu nanopowder is placed in a quartz boat, and the cleaned S i o 2 / S i Substrate, place the quartz boat in the quartz tube of the high temperature tube furnace and seal it;

[0021] Step b, put S powder in the quartz boat, the distance S i o 2 / S i Base 10-25cm;

[0022] Step c, pass inert gas into the quartz tube to completely discharge the air in the tube, reduce the flow rate of the inert gas, heat up the high-temperature tube furnace to 600-800°C, and cool down naturally after the reaction is complete;

[0023] In step d, the sample is taken out when the temperature of the quartz tube reaches room temperature, and the sample preparation is completed.

Embodiment 2

[0024] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in this embodiment, S i o 2 / S i To clean the substrate, first use acetone and isopropanol to sonicate for 15-25 minutes, then put in H 2 o 2 and H 2 SO 4 Wash in the mixed solution for 1-3h, and finally wash with deionized water.

Embodiment 3

[0025] Embodiment 3: The difference between this embodiment and Embodiment 1 is that in this embodiment, the H 2 o 2 and H 2 SO 4 The volume ratio in the mixed solution is 1:3.

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Abstract

The invention discloses a preparing method for cuprous sulfide nanosheets. A chemical vapor deposition method is used, and the preparing method mainly includes the following steps that nano-copper powder and powdered sulfur are placed into a railboat, and then a reaction is made in a tubular furnace to prepare two-dimensional cuprous sulfide thin sheets; and the prepared cuprous sulfide thin sheets serve as a material to test XRD. The method for preparing cuprous sulfide is simple in process, mature in technology and quiet favorable for commercialization popularization, and equipment is easily obtained; and in addition, the cuprous sulfide prepared from the method is good in degree of crystallinity, and the smoothness of a thin film is high. Conversion of the cuprous sulfide from the beta phase to the gamma phase is carried out at the temperature close to the room temperature.

Description

technical field [0001] The invention relates to the technical field of new energy materials, in particular to a method for preparing cuprous sulfide nanosheets whose phase transition is close to room temperature for XRD testing. Background technique [0002] Cuprous sulfide is a semiconductor material with a bandgap of 1.2eV, which can be used to store information, supercapacitors, Li-ion batteries, solar cells, and photovoltaic devices. Nowadays, there are many ways to prepare cuprous sulfide, For example, preparation methods such as hydrothermal-solvothermal method, sol-gel method and magnetron sputtering, but there is currently a lack of a method for preparing high-quality two-dimensional cuprous sulfide; based on this background, the applicant utilizes atmospheric pressure chemical vapor deposition Methods High-quality two-dimensional cuprous sulfide nanosheets were prepared; XRD was tested using the prepared cuprous sulfide nanosheets, and it was found that the β-to-γ p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30
CPCC23C16/305
Inventor 李京波黎博鹿方园吴福根陈新
Owner GUANGDONG UNIV OF TECH
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