Inorganic perovskite quantum dot light-emitting diode with inverted structure

A technology of quantum dot light emission and inorganic calcium, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of performance deterioration, unfavorable, and hindering the development of flexible electroluminescent devices, and achieve high luminous efficiency, novel structure, and luminous wavelength Adjustable range of effects

Active Publication Date: 2016-06-29
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Ordinary light-emitting diodes use alkali metals and aluminum as cathode materials. ITO/PEDOT:PSS/TFB/QDs are used in the literature (High-efficiency light-emitting devices based on quantum dots with tailored nanostructures[J].Nature Photonics,2015,9(4):259-2...

Method used

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  • Inorganic perovskite quantum dot light-emitting diode with inverted structure
  • Inorganic perovskite quantum dot light-emitting diode with inverted structure
  • Inorganic perovskite quantum dot light-emitting diode with inverted structure

Examples

Experimental program
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Embodiment 1

[0019] Step 1, magnetron sputtering deposition of ZnO on the cleaned ITO glass, the thickness is 40nm;

[0020] Step 2. Take 10mg / mL CsPbBr 3 The dispersion of quantum dots is spin-coated at a speed of 2000r / min;

[0021] Step 3, deposit TCTA by thermal evaporation method, the deposition thickness is 30nm;

[0022] Step 4. Deposit MoO by thermal evaporation 3 , The deposition thickness is 10nm;

[0023] Step 5: Deposit Au electrode with a mask plate by thermal evaporation method with a thickness of 100nm to obtain CsPbBr with reversed structure 3 Inorganic perovskite quantum dot light-emitting diodes.

[0024] The CsPbBr of the inverted structure prepared in this embodiment 3 The electroluminescence spectrum of inorganic perovskite quantum dot light-emitting diodes is as follows figure 1 As shown, it can be seen that the FWHM of the luminescence peak is about 20nm, and the color purity is very high; the relationship between the current density and the external quantum efficiency is show...

Embodiment 2

[0026] Step 1. Magnetron sputtering deposition of ZnO on the cleaned ITO glass with a thickness of 30nm;

[0027] Step 2. Take 15mg / mL CsPbClBr 2 The dispersion of quantum dots is spin-coated at a speed of 2000r / min;

[0028] Step 3, deposit TCTA by thermal evaporation method, the deposition thickness is 20nm;

[0029] Step 4. Deposit MoO by thermal evaporation 3 , The deposition thickness is 5nm;

[0030] Step 5: Deposit Au electrode with a mask plate by thermal evaporation method, with a thickness of 80nm, to obtain CsPbClBr with reversed structure 2 Inorganic perovskite quantum dot light-emitting diodes.

Embodiment 3

[0032] Step 1. Magnetron sputtering deposition of ZnO on the cleaned ITO glass with a thickness of 50 nm;

[0033] Step 2. Take 10mg / mL CsPbBr 2 The dispersion of I quantum dots is spin-coated at a speed of 2000r / min;

[0034] Step 3, deposit TCTA by thermal evaporation method, the deposition thickness is 40nm;

[0035] Step 4, deposit MoO3 by thermal evaporation method with a deposition thickness of 20nm;

[0036] Step 5: Deposit Au electrode with a mask plate by thermal evaporation method with a thickness of 100nm to obtain CsPbBr with reversed structure 2 I inorganic perovskite quantum dot light-emitting diodes.

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Abstract

The invention discloses an inorganic perovskite quantum dot light-emitting diode with inverted structure, which comprises an ITO glass substrate, a ZnO electron transmission layer, an inorganic perovskite CsPbX3 quantum dot light-emitting layer, a 4,4',4''-tri(carbazole-9-yl) triphenylamine hole transport layer, a hole injection layer and an anode electrode material, wherein the ZnO electron transmission layer is deposited on the ITO glass substrate. The inorganic perovskite quantum dot light-emitting diode is prepared by the following steps: firstly, depositing the ZnO electron transport layer on clean ITO glass by a magnetron sputtering method, and then carrying out spin coating of taken dispersion liquid of CsPbX3 quantum dots on the surface of a device; secondly, carrying out thermal evaporation deposition of a TCTA hole transport layer and carrying out thermal evaporation deposition of the hole injection layer; and finally depositing the anode electrode material. The light-emitting diode disclosed by the invention can adjust the coverage area of the halogen proportion of the quantum dot light-emitting layer material on the visible light, and is stable to shine and high in luminous efficiency.

Description

Technical field [0001] The invention relates to an inorganic perovskite quantum dot light-emitting diode with an inverted structure, which belongs to the field of electro-induced quantum dot light-emitting devices. Background technique [0002] Due to its excellent photoelectric properties, perovskite materials have received extensive attention in the fields of light-emitting diodes and lasers. Inorganic metal halide perovskite (CsPbX 3 ) Excellent optical performance and better stability than traditional hybrid perovskite materials, which have great potential in the application of optoelectronic devices. Inorganic metal halide perovskite quantum dots have attracted wide attention because of their unique optical properties, such as scale-dependent luminescence, narrow emission spectrum and high luminous efficiency. [0003] Ordinary light-emitting diodes use alkali metals and aluminum as cathode materials. In the literature (High-efficiencylight-emitting devicesbasedonquantumdotsw...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 曾海波李建海董宇辉宋继中许蕾梦薛洁
Owner NANJING UNIV OF SCI & TECH
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