An Inverted Structure Inorganic Perovskite Quantum Dot Light-Emitting Diode

A quantum dot light-emitting, inorganic calcium technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unfavorable, hindering the development of flexible electroluminescent devices, performance deterioration, etc., and achieve novel structure, adjustable emission wavelength range, The effect of high luminous efficiency

Active Publication Date: 2018-03-09
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Ordinary light-emitting diodes use alkali metals and aluminum as cathode materials, which are used in literature (High-efficiency light-emitting devices based on quantum dots with tailored nanostructures[J].Nature Photonics,2015,9(4):259-266.) ITO / PEDOT:PSS / TFB / QDs / ZnO / Al structure, Al electrodes are easily oxidized by air and moisture, causing performance deterioration, so glass and adhesives are required for packaging, which is not conducive to cost reduction, and also hinders flexible electroluminescence device development

Method used

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  • An Inverted Structure Inorganic Perovskite Quantum Dot Light-Emitting Diode
  • An Inverted Structure Inorganic Perovskite Quantum Dot Light-Emitting Diode
  • An Inverted Structure Inorganic Perovskite Quantum Dot Light-Emitting Diode

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Experimental program
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Effect test

Embodiment 1

[0019] Step 1, deposit ZnO on the cleaned ITO glass by magnetron sputtering, with a thickness of 40nm;

[0020] Step 2, take 10mg / mL of CsPbBr 3 The quantum dot dispersion is spin-coated at a speed of 2000r / min;

[0021] Step 3, depositing TCTA by thermal evaporation method, the deposition thickness is 30nm;

[0022] Step 4, Depositing MoO by Thermal Evaporation 3 , the deposition thickness is 10nm;

[0023] Step 5, depositing Au electrodes with a mask plate by thermal evaporation method, with a thickness of 100nm, to obtain CsPbBr with an inverted structure 3 Inorganic perovskite quantum dot light-emitting diodes.

[0024] The CsPbBr of the inverted structure that present embodiment makes 3 The electroluminescence spectrum of inorganic perovskite quantum dot light-emitting diodes is as follows figure 1 As shown, it can be seen that the half-height width of the luminescence peak is about 20nm, and the color purity is very high; the relationship between the current densit...

Embodiment 2

[0026] Step 1, deposit ZnO on the cleaned ITO glass by magnetron sputtering, with a thickness of 30nm;

[0027] Step 2, take 15mg / mL of CsPbClBr 2 The quantum dot dispersion is spin-coated at a speed of 2000r / min;

[0028] Step 3, depositing TCTA by thermal evaporation method, the deposition thickness is 20nm;

[0029] Step 4, Depositing MoO by Thermal Evaporation 3 , the deposition thickness is 5nm;

[0030] Step 5, depositing Au electrodes with a mask plate by thermal evaporation method, with a thickness of 80nm, to obtain CsPbClBr with an inverted structure 2 Inorganic perovskite quantum dot light-emitting diodes.

Embodiment 3

[0032] Step 1, deposit ZnO on the cleaned ITO glass by magnetron sputtering, with a thickness of 50nm;

[0033] Step 2, take 10mg / mL of CsPbBr 2 The dispersion liquid of 1 quantum dot is spin-coated, and the rotating speed is 2000r / min;

[0034] Step 3, depositing TCTA by thermal evaporation method, the deposition thickness is 40nm;

[0035] Step 4, depositing MoO by thermal evaporation method, the deposition thickness is 20nm;

[0036] Step 5, depositing Au electrodes with a mask plate by thermal evaporation method, with a thickness of 100nm, to obtain CsPbBr with an inverted structure 2 I Inorganic perovskite quantum dot light-emitting diodes.

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Abstract

The invention discloses an inorganic perovskite quantum dot light-emitting diode with an inverted structure, including an ITO glass substrate, a ZnO electron transport layer deposited on the surface of the ITO glass, an inorganic perovskite CsPbX3 quantum dot light-emitting layer, 4,4', 4”‑tris(carbazole‑9‑based) triphenylamine hole transport layer, hole injection layer and anode electrode material. Prepared by the following steps: first deposit ZnO electron transport layer on clean ITO glass by magnetron sputtering layer, get CsPbX afterwards The dispersion liquid of quantum dot is spin-coated on the device surface, then thermal evaporation deposits TCTA hole transport layer, then thermal evaporation deposits hole injection layer, and finally deposits anode electrode material. Light-emitting diode of the present invention can adjust quantum dot The halogen ratio of the light-emitting layer material covers the range of visible light, and the luminescence is stable and the luminous efficiency is high.

Description

technical field [0001] The invention relates to an inorganic perovskite quantum dot light-emitting diode with an inverted structure, and belongs to the field of electroinduced quantum dot light-emitting devices. Background technique [0002] Due to its excellent photoelectric properties, perovskite materials have attracted extensive attention in the fields of light-emitting diodes and lasers. Inorganic metal halide perovskites (CsPbX 3 ) have excellent optical properties and better stability than traditional hybrid perovskite materials, which have great potential in the application of optoelectronic devices. Inorganic metal halide perovskite quantum dots have attracted extensive attention due to their unique optical properties, such as scale-dependent luminescence, narrow emission spectra, and high luminous efficiency. [0003] Ordinary light-emitting diodes use alkali metals and aluminum as cathode materials, which are used in literature (High-efficiency light-emitting de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 曾海波李建海董宇辉宋继中许蕾梦薛洁
Owner NANJING UNIV OF SCI & TECH
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