A kind of flexible transparent electrode and preparation method thereof

A transparent electrode and flexible technology, applied to the conductive layer on the insulating carrier, ion implantation plating, coating, etc., can solve the problems that affect the optical properties of transparent conductive films, metals do not have optical transparency, and are easy to be reduced. , to achieve the effect of good application prospect, excellent electrical performance and simple process

Active Publication Date: 2017-08-25
徐州鹏盛铸造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the carrier concentration of the current transparent conductive film is close to the upper limit, so it is difficult to reduce the resistivity by further increasing the carrier concentration, and the high carrier concentration will seriously affect the optical properties of the transparent conductive film.
In addition, indium is toxic, expensive, poor in stability, and easily reduced in a hydrogen plasma atmosphere. People are trying to find a low-cost and high-performance ITO replacement material.
[0003] Metals have extremely low resistivity, but metals are not optically transparent

Method used

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  • A kind of flexible transparent electrode and preparation method thereof
  • A kind of flexible transparent electrode and preparation method thereof
  • A kind of flexible transparent electrode and preparation method thereof

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Effect test

Embodiment 1

[0029] The invention discloses a flexible transparent electrode, which is specifically prepared by the following preparation method:

[0030] BaSnO 3 Thin film layer deposition: with BaSnO 3 Put Cu and Cu as the target into the magnetron sputtering chamber, use PC as the flexible transparent substrate, control the distance between the target and the substrate to 100mm, and pump the background vacuum of the magnetron sputtering system to 5.0× 10 - 4 Pa, 30sccm of high-purity argon gas is introduced as the sputtering gas to sputter BaSnO 3 Target material, the sputtering power is 40W, the total sputtering pressure is 1.0Pa, and BaSnO is deposited 3 film layer;

[0031] Cu layer deposition: BaSnO 3 After the deposition of the thin film layer is completed, the Cu target is sputtered with argon mixed gas as the sputtering gas, and the Cu layer is sputtered, the sputtering power is 30W, and the sputtering pressure is 0.6Pa. 3 Thin film layer deposition obtains Cu layer;

[0...

Embodiment 2

[0034] The invention discloses a flexible transparent electrode, which is specifically prepared by the following preparation method:

[0035] BaSnO 3 Thin film layer deposition: with BaSnO 3 Put Cu and Cu as the target into the magnetron sputtering cavity, use PET as the flexible transparent substrate, control the distance between the target and the substrate to 100mm, and pump the background vacuum of the magnetron sputtering system to 5.0× 10 -4 Pa, 20sccm of high-purity argon gas is used as the sputtering gas to sputter BaSnO 3 The target, the sputtering power is 30W, the total sputtering pressure is 0.5Pa, and BaSnO is deposited 3 film layer;

[0036] Cu layer deposition: BaSnO 3 After the deposition of the thin film layer is completed, the Cu target is sputtered with argon mixed gas as the sputtering gas, and the Cu layer is sputtered, the sputtering power is 20W, and the sputtering pressure is 1.0Pa. 3 Thin film layer deposition obtains Cu layer;

[0037] BaSnO 3...

Embodiment 3

[0039] The invention discloses a flexible transparent electrode, which is specifically prepared by the following preparation method:

[0040] BaSnO 3 Thin film layer deposition: with BaSnO 3 Put Cu and Cu as the target into the magnetron sputtering chamber, use PEN as the flexible transparent substrate, control the distance between the target and the substrate to be 120mm, and pump the background vacuum of the magnetron sputtering system to 5.0× 10 -4 Pa, 20sccm of high-purity argon gas is used as the sputtering gas to sputter BaSnO 3 Target material, the sputtering power is 20W, the total sputtering pressure is 0.5Pa, and BaSnO is deposited 3 film layer;

[0041] Cu layer deposition: BaSnO 3 After the deposition of the thin film layer is completed, the Cu target is sputtered with argon mixed gas as the sputtering gas, and the Cu layer is sputtered, the sputtering power is 20W, and the sputtering pressure is 0.5Pa. 3 Thin film layer deposition obtains Cu layer;

[0042]...

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Abstract

The invention discloses a flexible transparent electrode and a fabrication method thereof. The flexible transparent electrode is deposited on a flexible transparent substrate, is of a BaSnO3 / Cu / BaSnO-3 composite layered structure and is formed by sandwiching a Cu layer between two BaSnO3 thin film layers. The fabrication method of the flexible transparent electrode comprises the steps of BaSnO3 thin film layer deposition, Cu layer deposition and secondary deposition of the BaSnO3 thin film layer. The flexible transparent electrode and the fabrication method thereof have the characteristics of high optical transmittance, appropriate resistance, high stability and wide application prospect.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a flexible transparent electrode that can be used in optoelectronic devices such as flexible liquid crystal displays, flexible solar cells, organic and inorganic semiconductor lasers, and a preparation method thereof. Background technique [0002] Transparent conductive oxide (TCO) film is widely used in antistatic coatings, touch screens, solar cells, flat panel displays, heaters, anti-icing devices, optical coatings and transparent Optoelectronics and other aspects have broad development prospects, and the representative TCO film is In 2 o 3 : Sn (ITO) thin film, which has good photoelectric properties. However, the carrier concentration of the current transparent conductive film is close to the upper limit, so it is difficult to reduce the resistivity by further increasing the carrier concentration, and the high carrier concentration will seriously affect the optical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14C23C14/08C23C14/20C23C14/35
CPCC23C14/08C23C14/205C23C14/352H01B5/14
Inventor 吴木营何林杨雷凌东雄
Owner 徐州鹏盛铸造有限公司
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