A kind of flexible transparent electrode and preparation method thereof
A transparent electrode and flexible technology, applied to the conductive layer on the insulating carrier, ion implantation plating, coating, etc., can solve the problems that affect the optical properties of transparent conductive films, metals do not have optical transparency, and are easy to be reduced. , to achieve the effect of good application prospect, excellent electrical performance and simple process
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Embodiment 1
[0029] The invention discloses a flexible transparent electrode, which is specifically prepared by the following preparation method:
[0030] BaSnO 3 Thin film layer deposition: with BaSnO 3 Put Cu and Cu as the target into the magnetron sputtering chamber, use PC as the flexible transparent substrate, control the distance between the target and the substrate to 100mm, and pump the background vacuum of the magnetron sputtering system to 5.0× 10 - 4 Pa, 30sccm of high-purity argon gas is introduced as the sputtering gas to sputter BaSnO 3 Target material, the sputtering power is 40W, the total sputtering pressure is 1.0Pa, and BaSnO is deposited 3 film layer;
[0031] Cu layer deposition: BaSnO 3 After the deposition of the thin film layer is completed, the Cu target is sputtered with argon mixed gas as the sputtering gas, and the Cu layer is sputtered, the sputtering power is 30W, and the sputtering pressure is 0.6Pa. 3 Thin film layer deposition obtains Cu layer;
[0...
Embodiment 2
[0034] The invention discloses a flexible transparent electrode, which is specifically prepared by the following preparation method:
[0035] BaSnO 3 Thin film layer deposition: with BaSnO 3 Put Cu and Cu as the target into the magnetron sputtering cavity, use PET as the flexible transparent substrate, control the distance between the target and the substrate to 100mm, and pump the background vacuum of the magnetron sputtering system to 5.0× 10 -4 Pa, 20sccm of high-purity argon gas is used as the sputtering gas to sputter BaSnO 3 The target, the sputtering power is 30W, the total sputtering pressure is 0.5Pa, and BaSnO is deposited 3 film layer;
[0036] Cu layer deposition: BaSnO 3 After the deposition of the thin film layer is completed, the Cu target is sputtered with argon mixed gas as the sputtering gas, and the Cu layer is sputtered, the sputtering power is 20W, and the sputtering pressure is 1.0Pa. 3 Thin film layer deposition obtains Cu layer;
[0037] BaSnO 3...
Embodiment 3
[0039] The invention discloses a flexible transparent electrode, which is specifically prepared by the following preparation method:
[0040] BaSnO 3 Thin film layer deposition: with BaSnO 3 Put Cu and Cu as the target into the magnetron sputtering chamber, use PEN as the flexible transparent substrate, control the distance between the target and the substrate to be 120mm, and pump the background vacuum of the magnetron sputtering system to 5.0× 10 -4 Pa, 20sccm of high-purity argon gas is used as the sputtering gas to sputter BaSnO 3 Target material, the sputtering power is 20W, the total sputtering pressure is 0.5Pa, and BaSnO is deposited 3 film layer;
[0041] Cu layer deposition: BaSnO 3 After the deposition of the thin film layer is completed, the Cu target is sputtered with argon mixed gas as the sputtering gas, and the Cu layer is sputtered, the sputtering power is 20W, and the sputtering pressure is 0.5Pa. 3 Thin film layer deposition obtains Cu layer;
[0042]...
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