Light emitting diode and manufacturing method therefor

Abstract

The invention provides a light emitting diode and a manufacturing method therefor. The light emitting diode comprises an N type layer, a light emitting layer, a P type layer and a contact layer, wherein an insertion layer is designed between the P type layer and the contact layer; the insertion layer comprises an N<+> nitride layer and a P<+> nitride layer which are disjunctively distributed in a doping region; and the N<+> nitride layer and the P<+> nitride layer are not fully overlapped in the doping region in a perpendicular direction. Inclined tunneling junctions are formed by the N<+> nitride layer and the P<+> nitride layer disjunctively distributed in the doping region in the insertion layer, so that the current expansion is reinforced, and the luminance and reliability of the LED are improved.

Description

technical field [0001] The invention relates to the field of gallium nitride semiconductor devices, in particular to a light emitting diode with an effective current spreading layer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English for LightEmittingDiode, abbreviated as LED) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting structure. Gallium nitride is currently regarded as the third-generation III-IV semiconductor with a wide band gap and high luminescence. Efficiency, stable chemical properties, etc., but the LED with the traditional epitaxial structure has poor antistatic ability and uneven light output efficiency due to the current congestion phenomenon under the P electrode. [0003] In the design of LED structure, the solutions given for uneven luminescence, low light extraction efficiency and poor antistatic ability are to deposit a transparent current spreadi...

AI Technical Summary

Problems solved by technology

[0002] Light Emitting Diode (English for LightEmittingDiode, abbreviated as LED) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting structure. Gallium nitride is currently regarded as the third-generation III-IV semiconductor with a wide band gap and high luminescence. Efficiency, stable chemical properties, etc., but the LED with traditional epitaxial structure has poor antistatic ability and uneven light output efficiency due to the current congestion phenomenon under the P electrode.

[0003] In the design of LED structure, the solutions given for uneven luminescence, low light extraction efficiency and poor antistatic ability are to deposit a transparent current spreading layer (such as ITO) on the contact layer by chip technology, or on the P-type However, the above structures all achieve a certain degree of current expansion through the free distribution of carriers on the contact surface of the insertion layer or inside the insertion layer.

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