Unlock instant, AI-driven research and patent intelligence for your innovation.

Metallic oxide film transistor and preparation method therefor

A technology of oxide thin film and oxide film layer, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., can solve the problem of high cost of photolithography process, achieve the goal of simplifying process, reducing production cost and saving process Effect

Active Publication Date: 2016-07-13
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high cost of the photolithography process, if the number of masks used in the above array substrate manufacturing process can be reduced, the process can be simplified and the production cost can be reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metallic oxide film transistor and preparation method therefor
  • Metallic oxide film transistor and preparation method therefor
  • Metallic oxide film transistor and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0055] This embodiment provides a method for manufacturing a metal oxide thin film transistor, including the following steps:

[0056] Such as figure 1 As shown, a substrate 1 is provided.

[0057] Such as figure 2 As shown, a SiOx film layer is deposited on the substrate 1 by a chemical vapor deposition process, and the SiOx film layer is a buffer layer 2; a physical deposition process is used to deposit an IGZO oxide film layer 31 on the buffer layer 2; a chemical vapor deposition process is used A gate insulating layer 4 is deposited on the IGZO oxide film layer 31 ; a first metal layer 51 is deposited on the gate insulating layer 4 by using a physical deposition process. That is: a buffer layer, an oxide film layer, a gate insulating layer, and a first metal layer are sequentially formed on the substrate by using a chemical or physical vapor deposition process. Etching process.

[0058] Such as image 3 As shown, the photoresist layer 100 is deposited on the first m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a metallic oxide film transistor and a preparation method therefor. The method comprises the following steps: providing a substrate; sequentially forming a buffering layer, an oxide film layer, a grid insulating layer and a first metal layer on the substrate; carrying out the patterning processing of the first metal layer, the grid insulating layer and the oxide film layer through a light cover, forming a grid electrode, a patterned grid insulating layer, and an oxide active layer. The method firstly carries out the deposition of the oxide active layer and the grid electrode and then carries out the etching, and can complete the patterning processing of the oxide active layer and the grid electrode through one light cover. Because the number of light cover is reduced, the method can simplify the technological process, saves the technological time, and effectively reduces the production cost.

Description

technical field [0001] The invention relates to the field of wafer manufacturing and the field of display technology, in particular to a metal oxide thin film transistor and a preparation method thereof. Background technique [0002] Thin film transistor liquid crystal flat panel display is a type of active matrix liquid crystal display device. Each liquid crystal pixel on this type of display is driven by a thin film transistor integrated behind the pixel. Responsiveness and color fidelity have an important impact and are an important part of this type of display. Common thin film transistors mainly include amorphous silicon thin film transistors (a-SiTFT), low temperature polysilicon thin film transistors (LTPSTFT), metal oxide thin film transistors and the like. Among them, the TFT technology using metal oxide as the channel layer material is currently a research hotspot in the field of panel technology, especially the TFT technology using Indium Gallium Zinc Oxide (IGZO...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/66969H01L21/44H01L21/467H01L21/47573H01L27/1225H01L29/78603H01L29/7869H01L29/66742
Inventor 谢应涛
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD