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Plasma etching resistant ceramic body and manufacturing method thereof, and plasma etching device

A technology of ion etching and etching equipment, which is applied in the field of ceramic materials, can solve the problems of pollution, high-purity alumina ceramics are easily corroded by plasma, and damage wafers, etc., so as to achieve easy control of process conditions and improve plasma corrosion resistance The effect of high performance and wafer yield

Active Publication Date: 2016-07-20
SHENZHEN SUNTECH ADVANCED CERAMICS
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the embodiments of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide a plasma-etching-resistant ceramic body and its manufacturing method, so as to solve the technical problem that the existing high-purity alumina ceramics are easily corroded by plasma
[0007] Another object of the embodiments of the present invention is to provide a plasma etching equipment to solve the problem of contamination and damage to the wafer caused by existing plasma etching equipment containing existing high-purity alumina ceramic components that are easily corroded by plasma technical problem

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  • Plasma etching resistant ceramic body and manufacturing method thereof, and plasma etching device

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preparation example Construction

[0022] On the other hand, the embodiment of the present invention also provides a preparation method of the above-mentioned plasma etching resistant ceramic body of the embodiment of the present invention. In one embodiment, the method for preparing a plasma-etching resistant ceramic body according to the embodiment of the present invention includes the following steps:

[0023] Step S01: obtaining nano-alumina powder;

[0024] Step S02: The nano-alumina powder provided in step S01 is molded and then placed in a protective atmosphere for sintering.

[0025] In one embodiment, in the above step S01, the alumina powder contains unavoidable impurity components, and the mass content of the impurity components is not more than 0.001%, or the mass content of the alumina is not less than 99.999%. As mentioned above, since some impurities remain more or less in the production process of the alumina raw material, the content of the inevitable impurities is controlled not to be greate...

Embodiment 1

[0038] Embodiment 1 provides a plasma-etched ceramic body and a preparation method thereof. The plasma-etched ceramic body is obtained by firing alumina powder after compression molding, wherein the alumina powder has a purity of 99.999% and an average particle size of 200 nanometers.

[0039] The preparation method of the plasma etching ceramic body is as follows:

[0040] S11: Obtain nano-alumina powder with a purity of 99.999% and an average particle size of 200 nanometers;

[0041] S12: Put the nano-alumina powder into the metal mold for compression molding and then sintering; wherein, the metal mold is made of a wear-resistant metal mold; before the nano-alumina powder is loaded into the metal mold, the inner wall of the mold and the upper and lower The die punch is coated with boron nitride solution as a lubricant to form a continuous and uniform solid film on the inside of the die cavity to facilitate pressing and demoulding; the pressing pressure during the molding pr...

Embodiment 2

[0043] Embodiment 2 provides a plasma-etched ceramic body and a preparation method thereof. The plasma-etched ceramic body is obtained by firing alumina powder after compression molding, wherein the alumina powder has a purity of 99.999% and an average particle size of 200 nanometers.

[0044] The preparation method of the plasma etching ceramic body is as follows:

[0045] S11: Obtain nano-alumina powder with a purity of 99.999% and an average particle size of 200 nanometers;

[0046] S12: Put the nano-alumina powder into the metal mold for compression molding and then sintering; wherein, the metal mold is made of a wear-resistant metal mold; before the nano-alumina powder is loaded into the metal mold, the inner wall of the mold and the upper and lower The die punch is coated with boron nitride solution as a lubricant to form a continuous and uniform solid film on the inside of the die cavity to facilitate pressing and demoulding; the pressing pressure during the molding pr...

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Abstract

The invention discloses a plasma etching resistant ceramic body and a manufacturing method thereof, and a plasma etching device. The plasma etching resistant ceramic body is obtained by carrying out compression molding forming treatment of an alumina powder and then sintering, wherein the alumina powder contains inevitable impurity composition, and the mass content of the impurity composition is not more than 0.001%. The plasma etching resistant ceramic body has high plasma corrosion resistance, and the preparation method can make the prepared plasma etching resistant ceramic body have the advantages of high plasma corrosion resistance, stable size and high density. An etching chamber of the plasma etching device is internally provided with an alumina ceramic component which is formed by the plasma etching resistant ceramic body. Therefore, the alumina ceramic component has good plasma corrosion resistance, the yield of wafers obtained from etching is high, and the service life of the alumina ceramic component is effectively prolonged.

Description

technical field [0001] The invention belongs to the technical field of ceramic materials, and in particular relates to a plasma-etching-resistant ceramic body, a manufacturing method thereof, and plasma-etching equipment. Background technique [0002] Alumina ceramics are currently divided into two types: high-purity type and ordinary type. Among them, the current high-purity alumina ceramics such as A1 2 o 3 Ceramic materials with a content of more than 99.9% can be used as integrated circuit substrates and high-frequency insulating materials in the electronics industry because of their sintering temperature as high as 1650-1990 ° C and transmission wavelengths of 1-6 μm. [0003] With the continuous development of the semiconductor integrated circuit industry, in terms of silicon wafer manufacturing, the distance between transistors has rapidly shrunk to 32 nanometers and 25 nanometers or even smaller. In the process of wafer processing, under the condition of high-dens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/10
CPCC04B35/10C04B2235/5445C04B2235/77
Inventor 向其军谭毅成林勇钊
Owner SHENZHEN SUNTECH ADVANCED CERAMICS
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