Construction method for nonlinear scalable GaN HEMT model

Abstract

The invention discloses a method for constructing a nonlinear scalable GaN HEMT model. The problems of incapability of an existing GaN HEMT large-signal model in accurately fitting various effects in output current and difficulty in simulation of devices with different sizes are mainly solved. According to the technical scheme, the method comprises the following steps: 1, measuring a used device, and calculating a parameter of an EEHEMT large-signal model; 2, constructing a current source including direct current output curve data of the used device, scaling the current source by virtue of a normalization factor, and constructing an active compensation sub-circuit; 3, constructing a source potential adjustable active compensation sub-circuit on the basis of the active compensation sub-circuit, and connecting the source potential adjustable active compensation sub-circuit in parallel with an EEHEMT to finish construction of the nonlinear scalable GaN HEMT model. According to the method, various effects in a current direct output curve can be accurately fitted, a grid width can be effectively scaled, and the method can be used for GaN circuit design.

Description

technical field [0001] The invention belongs to the field of microelectronic technology, and specifically relates to a method for constructing a nonlinear scalable model of a GaN high electron mobility transistor HEMT, which can be used for circuit design of a GaN high electron mobility transistor, and more accurately predicts the operation of transistors of different sizes. Performance when operating under large signal conditions. technical background [0002] As a typical representative of the third-generation wide-bandgap semiconductor materials, GaN-based materials have the advantages of large bandgap, high breakdown voltage, high electron mobility, good temperature characteristics and radiation resistance characteristics, making them suitable for high-power radio frequency applications. It plays an irreplaceable role in amplifier design and extreme harsh environment applications. Among them, AlGaN / GaN high electron mobility transistor HEMT is a new type of microwave po...

AI Technical Summary

Problems solved by technology

However, the establishment of a table-based model requires a large amount of test data, and the scalability of the table-based model is difficult because a large number of devices of different sizes need to be fabricated and tested, and the test data is integrated in the computer-aided design software

[0007] The inaccuracy, incompatibility, scalability, and time-consuming nature of existing models have seriously hindered the modeling of semiconductor devices. In particular, there is currently no mature model that can accurately describe the high electron mobility of GaN at the same time. The DC characteristics and scalability of high-rate transistors seriously affect the construction of GaN large-signal models and the design of related circuits

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