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Slicing method

A technology of slicing and cooling liquid, applied in the direction of manufacturing tools, grinding machines, grinding/polishing equipment, etc., can solve problems such as wafer pollution and achieve the effect of reducing copper pollution

Active Publication Date: 2016-08-10
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason why copper plating or copper alloy plating is applied to the surface of the plain wire of the wire is to impart an anti-rust effect and to obtain a lubricating effect. The lubricating effect is used to allow the wire to pass through the In the case of a mold with a specified aperture, etc.; however, if a wire with copper plating applied to the surface is used, there is a problem that the wafer obtained by dicing will be contaminated with high-concentration copper

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～9

[0079] (Examples 1-9, Comparative Examples 1-6)

[0080] use Figure 4 A wire saw that reciprocates the wire while supplying coolant to the wire, and slices a single crystal silicon ingot into wafers. At this time, in Examples 1-9, like this invention, the cooling liquid whose copper density|concentration was adjusted to 80 ppm or less was supplied to the line. On the other hand, in Comparative Examples 1 to 6, unlike the present invention, the coolant whose copper concentration was adjusted to be higher than 80 ppm was supplied to the line.

[0081] The preparation of the cooling liquid which differs in copper density|concentration in Examples 1-9 and Comparative Examples 1-6 is demonstrated in detail.

[0082]First, silicon carbide (SiC) abrasive grains are dispersed in a glycol-based dispersant. The copper concentration of the coolant thus produced was 5 ppm. Therefore, fill the resulting coolant into the Figure 4 In the same wire saw, a wire with brass plating on the...

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Abstract

The present invention provides a slicing method wherein a wire saw is used; and a coolant is supplied to a wire wound around multiple wire guides, and a silicon ingot is pressed against the wire to cut the silicon ingot while the wire is made to move, thereby obtaining multiple sliced wafers. The copper concentration in the coolant supplied to the wire is less than or equal to 80ppm. Thus, a slicing method is provided which involves using a wire saw to stably obtain high-purity silicon wafers with reduced copper contamination.

Description

technical field [0001] The invention relates to a slicing method, which uses a wire saw to cut a silicon crystal ingot into a wafer shape. Background technique [0002] In a general method of manufacturing silicon wafers, the cultivated single crystal silicon ingot is first inspected for resistivity and crystallinity, and then usually cut into blocks with a resistivity within a certain range. Moreover, the original state of the grown ingot is not a perfect cylinder, and the diameter is not uniform, so peripheral grinding is performed to make the diameter of each block uniform. Next, an orientation flat or notch is applied to the perimeter ground block in order to indicate a specific crystallographic orientation. [0003] Next, each block is cut into a plurality of wafers, and each wafer is subjected to a process consisting of the following steps to produce a wafer with high-definition flatness: chamfering, lapping, Etching, gettering treatment, oxygen donor removal heat tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B27/06B24B57/02B28D5/04
CPCH01L21/304B28D5/0076B28D5/045B24B27/0633H01L21/02002H01L21/78
Inventor 北川幸司
Owner SHIN-ETSU HANDOTAI CO LTD