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Transparent conductive film and manufacturing method thereof

A technology of transparent conductive film and conductive film, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, equipment for manufacturing conductive/semiconductive layer, etc. Issues such as flexible substrate surfaces

Active Publication Date: 2016-08-24
SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the sputtering process, the temperature will rise and damage the surface of the flexible substrate, the film formation rate is lower than that of vacuum evaporation, and it is easily affected by impurity gases
In addition, the bonding force between the substrate and the conductive film is poor, basically lower than 0.5N / mm

Method used

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  • Transparent conductive film and manufacturing method thereof
  • Transparent conductive film and manufacturing method thereof
  • Transparent conductive film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] This embodiment relates to an undoped metal oxide type transparent conductive film.

[0078] First, glass with a thickness of 500 μm is selected as the transparent substrate. Then, a conductive layer is formed on the surface of the glass by using a treatment method of ion implantation followed by plasma deposition.

[0079] In the ion implantation process, ZnO was selected as the vacuum cathode arc target material, the process temperature of the ion implantation was controlled at 600°C, and the vacuum was pumped to 2×10 -1 up to 5×10 -5 Pa. The implantation energy of controlled ions is 50-100keV, and the implantation dose is 1.0×10 17 to 5.0×10 17 ion / cm 2 , so that the lower surface of the ion implantation layer is located at a depth of 5-50 nm below the surface of the glass.

[0080] In the plasma deposition process, ZnO is still selected as the vacuum cathode arc target, the plasma deposition energy is controlled to be 1-1000eV, and a plasma deposition layer wi...

Embodiment 2

[0083] This embodiment relates to a metal oxide-doped transparent conductive film of a binary system.

[0084] First, a PI film with a thickness of 6-200 μm is selected as the transparent substrate. Then, a first conductive layer and a second conductive layer are sequentially formed on the surface of the PI film, wherein the first conductive layer is ZnO with a thickness of 5-500nm, and the second conductive layer is Al or Ag with a thickness of 5-500nm.

[0085] When preparing the first conductive layer (ZnO), a treatment method of first ion implantation and then plasma deposition is adopted. In the ion implantation process, ZnO was selected as the target material, the process temperature of the ion implantation was controlled to be 600°C, and the vacuum was evacuated to 2×10 -1 up to 5×10 -5 Pa. The implantation energy of controlled ions is 50-100keV, and the implantation dose is 1.0×10 17 to 5.0×10 17 ion / cm 2 , so that the lower surface of the ion implantation layer ...

Embodiment 3

[0089] This embodiment relates to a metal oxide-doped transparent conductive film of a ternary system.

[0090] First, a PET film with a thickness of 10-200 μm is selected as the transparent substrate. Then, a first conductive layer and a second conductive layer are sequentially formed on the surface of the PET film, wherein the first conductive layer is MgO 2 -TiO 2 The doping structure, the second conductive layer is In 2 o 3 .

[0091] In the preparation of the first conductive layer (MgO 2 -TiO 2 ), choose MgO 2 -TiO 2 The target is used as a vacuum cathode arc target, and the treatment method is ion implantation followed by plasma deposition. The target is prepared by high-temperature sintering method, that is, MgO with an average particle size of 1 μm or less 2 Powder and TiO 2 The powders are blended and granulated at an atomic ratio of 1:1 in a high-temperature furnace, and a certain pressure (8ton / cm 2 ) to shape the produced powder, and then introduce oxyg...

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Abstract

The invention relates to a transparent conductive film and a manufacturing method thereof. The transparent conductive film includes the steps of conducting pre-processing on a transparent base material (10), and conducting ion injection and / or plasma deposition on the surface (12) of the transparent base material by using a target material to form a conducting layer (14) on the surface (12) of the transparent base material.

Description

technical field [0001] The invention relates to a transparent conductive film and a manufacturing method thereof. The conductive film can be widely used in transparent electrodes of solar cells, liquid crystal displays, gas sensors, antistatic coatings, anti-frost and foggy glass for aircraft and automobile windshields, energy-saving glass windows for buildings and Electrochromic devices, etc. Background technique [0002] As one of the main materials in the field of optoelectronic technology, transparent conductive film (TCO) has been widely used in transparent electrodes of solar cells, liquid crystal displays, gas sensors, antistatic coatings, anti-frost and foggy glass for aircraft and automobile windshields, and energy-saving glass for buildings. windows and electrochromic devices, etc. In practical applications, transparent conductive films are required to have good visible light transmittance (above 80%) and low resistivity (less than 10 -3 Ω·cm). At present, trans...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14
CPCH01B5/14H01B13/0026
Inventor 王志建陈啸龙张金强杨志刚
Owner SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
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