Etching pattern overprinting high-precision alignment method and device

Abstract

The invention discloses an etch pattern overprinting high-precision alignment method. The method comprises the following steps: S1)providing a silicon wafer and a slurry carrier; S2) taking a picture of the silicon wafer by a visual identification system; S3) selecting a fixed-position ROI region on the picture, obtaining a group of ROI region data through a vertical projection method, carrying out data pretreatment through a discrete data curve smoothing algorithm and carrying out calculating to obtain positions of wave crests and line width; S4) comparing line width of mask lines in the ROI region and the width of the wave crests, and carrying out calculation to obtain angle of the mask line pattern; S5) rotating the silicon wafer for corresponding angle and position through a moving device to enable the mask line pattern to be overlapped with the pattern of the slurry carrier; and S6) enabling laser to be acted on the slurry carrier and slurry on the pattern position of the mask line finally. Meanwhile, the invention also discloses an etch pattern overprinting high-precision alignment device. The etch pattern and electrode pattern alignment precision is improved; the efficiency of a battery piece is improved; and the cost of a mask is saved.

Description

technical field [0001] The present invention relates to a pattern overprint visual alignment method and device for selective etching process, in particular to a high-precision alignment method and device for etching pattern overprint, which are used for selective etching of solar cells (SelectiveEmmiter, The SE process for short belongs to the technical field of solar cell electrode production. Background technique [0002] On the basis of the traditional photovoltaic solar cell manufacturing process, there is a new selective etching (Selective Emmiter, referred to as SE) process technology, one of the main differences between the SE process and the traditional cell is that it uses printing after diffusion The mask material is printed on the front of the cell, and the pattern is consistent with the final electrode pattern. However, since the rear electrode needs to be on the mask pattern, the line of the mask pattern is wider than the electrode. As for the width, it depends ...

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the technical problem that the alignment accuracy between the mask pattern and the electrode pattern in the selective etching process is not high in the prior art, and provides an etching pattern positioning method, an etching pattern overprinting high-precision alignment method and a device, and improves the engraving process. The accuracy of the alignment between the etching pattern and the electrode pattern can reduce the line width of the SE pattern as much as possible, thereby improving the efficiency of the cell and saving mask costs

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