Film bulk acoustic resonator having multiple resonance modes and preparation method thereof and filter
A thin-film bulk acoustic wave and resonator technology, applied in electrical components, impedance networks, etc., can solve the problems of unfavorable RF front-end miniaturization, integrated development, increasing the complexity of the external impedance of the filter, and difficulty in debugging the whole machine. The whole machine is debugged, the difficulty of production is reduced, and the effect of integration is beneficial
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[0038] Example 1
[0039] The film bulk acoustic resonator with multiple resonance modes in this embodiment is prepared by the following preparation method:
[0040] 1. Etch a groove on the surface of the silicon substrate 1 with a depth of 30μm, and then deposit Si by PECVD 3 N 4 The substrate protection layer 2 has a thickness of 200 nm to protect the silicon substrate. Such as figure 1 Shown.
[0041] 2. In Si 3 N 4 A layer of PSG (phosphosilicate glass) is deposited on the PECVD as a sacrificial layer.
[0042] 3. Surface polishing of the sacrificial layer by CMP process.
[0043] 4. A layer of Mo bottom electrode 4 is deposited on the polished surface by DC magnetron sputtering, with a thickness of 200 nm, and patterned by photolithography.
[0044] 5. Using radio frequency magnetron sputtering to deposit AlN piezoelectric film with preferred orientation of C axis. And the multi-layer structure is etched by photolithography and ICP. This embodiment is a three-layer AlN piezoelect...
Example Embodiment
[0049] Example 2
[0050] 1. PECVD deposits a layer of PSG (phosphosilicate glass) on the surface of the silicon substrate 1 as the sacrificial layer 7, and photoetches the sacrificial layer pattern. Such as image 3 Shown.
[0051] 2. Deposit a layer of Si by PECVD 3 N 4 The supporting layer 8 has a thickness of 300 nm.
[0052] 3. Pattern a layer of Mo bottom electrode 4 with a thickness of 150 nm by photolithography and magnetron sputtering.
[0053] 4. The C-axis preferential orientation AlN piezoelectric film is deposited by radio frequency magnetron sputtering. And the multi-layer structure is etched by photolithography and ICP. This embodiment is a 3-layer AlN piezoelectric film, and the area size of the AlN piezoelectric film decreases from bottom to top; the thickness of each layer from bottom to top is 2 μm, 0.8 μm, and 0.5 μm, respectively.
[0054] 5. A layer of Mo top electrode 6 with a thickness of 150 nm is patterned by photolithography and electron beam evaporation. ...
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