CMOS image sensor chip scale packaging method

Abstract

The invention provides a CMOS image sensor wafer scale packaging method comprising the steps that a wafer is provided, the wafer is provided with multiple image sensor chips, cutting channels are arranged between the image sensor chips, each image sensor chip is provided with a light-sensitive area and a non-light-sensitive area, the light-sensitive area is provided with pixel units, and the non-light-sensitive area is provided with first electrodes; a supporting frame is provided, the supporting frame is fixed on the image sensor chips, the internal side of the supporting frame is open and the light-sensitive area is exposed, the supporting frame does not completely cover the first electrodes, a conductive layer is formed on the surface of the first electrodes and the supporting frame and electrically connected with the top contacts of the supporting frame; and the wafer is cut along the cutting channels so as to form packaging members.

Description

technical field [0001] The invention relates to the field of image sensors, and is characterized in that it relates to a chip-level packaging method of a CMOS image sensor. Background technique [0002] An image sensor is a semiconductor device device that converts optical information into electrical signals. Existing image sensors can be further classified into complementary metal oxide semiconductor (CMOS) image sensors and charge coupled device (CCD) image sensors. [0003] Image sensors are developing toward miniaturization, and the new generation of electronic products has higher requirements for image sensor packaging structures, such as smaller shape and lower cost. However, traditional image sensor packaging methods usually lead the pads on the functional surface of the image sensor to the back, and then make conductive solder balls or pins on the back, so that the obtained image sensor packaging structure can be connected to external circuits. However, the existin...

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Problems solved by technology

[0004] 1. The existing image sensor packaging method needs to fabricate the back-side lead-out structure on the image sensor, that is, the back-side lead-out structure cannot be separated from the image sensor and must be fabricated separately first, so the yield rate of the back-side lead-out structure is not easy to control independently, and the back-side lead-out structure cannot be separated from the image sensor. The manufacturing yield of the structure is not high, resulting in low packaging process yield;

[0005] 2. In addition to setting the rear lead-out structure in the existing image sensor packaging method, it is also necessary to set a protective substrate on the functional surface of the image sensor for protection. In this way, the functional surface and the back of the image sensor need to be increased to a certain thickness, so the image sensor cannot be integrated. The packaging structure is made thinner;

[0006] 3. When setting the back lead-out structure for the image sensor, it is necessary to set an insulating layer and a protective layer on the back to protect the corresponding wires. However, the setting of these wires, insulating layers or protective layers not only increases the complexity and complexity of the image sensor package. process cost, and reduce the heat dissipation performance of the formed image sensor package structure

[0010] For this reason, there is an urgent need for an image sensor packaging method to solve the problems of complex process and high process cost of the existing image sensor packaging method, the problem of large thickness of the existing image sensor packaging structure and poor heat dissipation performance, and the existing image sensor module The problem of complex process and high process cost of the forming method, as well as the problem of large thickness and poor heat dissipation performance of the existing image sensor module

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