Image sensor structure and manufacturing method thereof
A technology of image sensor and manufacturing method, which is applied in the direction of semiconductor devices, electric solid devices, radiation control devices, etc., can solve the problems of large crosstalk and low filling factor, and achieve the effects of reducing crosstalk between pixels, remarkable effect and anti-crosstalk
Active Publication Date: 2019-01-18
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0010] The purpose of the present invention is to overcome the above-mentioned defects in the prior art, and provide an image sensor structure and its manufacturing method to solve the problems of low fill factor and large crosstalk in the existing CMOS image sensor
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0039] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0040] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.
[0041] In the following specific embodiments of the present invention, please refer to Figure 4, Figure 4 It is a structural schematic diagram of an image sensor in a preferred embodiment of the present invention. Such as Figure 4 As shown, an image sensor structure of the present invention may include from bottom to top: a semiconductor substr...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention discloses an image sensor structure and a manufacturing method thereof. A conductive shielding ring is arranged at an encircling contact lower electrode in a CMOS image sensor structure to form electric field isolation, the voltage applied on the electric field isolation is configured to restrict the flow direction of a photoproduction carrier in the photosensitive quantum dot film to divide the continuous film into different areas so as to reduce the crosstalk between pixels; and the sizes of the separated areas are changed through applying different shielding voltages, and the image sensor structure and the manufacturing method thereof are applied to different application scenes so as to obtain the balance of the resolution and the sensitivity. The image sensor structure and the manufacturing method thereof are simple in structure with no need for adding extra process steps and cost at manufacturing, and have significant effect on resistance to crosstalk.
Description
technical field [0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing, and more particularly, to a low-crosstalk image sensor structure and a manufacturing method thereof. Background technique [0002] Image sensors are devices that convert optical image information into electrical signals. Traditional solid-state image sensors can include two types of CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal Oxide Semiconductor) image sensors. [0003] The CMOS image sensor uses an active pixel sensor in the pixel array and uses a CMOS integrated circuit process, so that the photosensitive structure of the pixel array and other CMOS analog and digital circuits can be integrated on the same chip. High integration can not only reduce the number of chips in the whole machine, reduce the power consumption and packaging cost of the whole machine, but also the direct signal connection inside the chip is also c...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14636H01L27/14683
Inventor 耿阳胡少坚陈寿面
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT