Transistor vertical-cavity surface-emitting laser

A technology of vertical cavity surface emission and lasers, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of losing enhanced modulation bandwidth and restricting device performance, so as to reduce adverse effects, reduce production costs, and improve lateral distribution. Effect

Active Publication Date: 2016-09-07
苏州长瑞光电有限公司
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Problems solved by technology

However, whether it is the T-VCSEL structure proposed by patent SE:2013051451:W or other existing T-VCSEL structures, there is a common key problem that restricts the further improvement of device perform

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  • Transistor vertical-cavity surface-emitting laser
  • Transistor vertical-cavity surface-emitting laser
  • Transistor vertical-cavity surface-emitting laser

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Embodiment Construction

[0028] The technical scheme of the present invention is described in detail below in conjunction with accompanying drawing:

[0029] There is an important defect in the existing T-VCSEL: as the input current increases, the working state of the device changes rapidly from amplification to saturation, thus losing the function of enhancing the modulation bandwidth. The essential reason is that due to the limited injection of carriers, stimulated radiation mainly occurs in the active region near the center of the device, but the overall movement path of carriers includes not only the vertical direction along the center of the device, but also Due to the horizontal direction brought by the position of the corresponding electrode, and the path length of the latter is much longer than that of the former, this is especially evident in the collector region. The thickness of the layer structure of the entire device is only a few microns, and the distance between the collector and the cen...

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Abstract

The invention discloses a transistor vertical-cavity surface-emitting laser (T-VCSEL), and belongs to the technical field of an integrated photoelectronic device. The T-VCSEL comprises a buffer layer, a lower end face distributed Bragg reflector, a collector region, a base region, an emitter region and an upper end face distributed Bragg reflector which are successively arranged according to an epitaxial growth sequence. The T-VCSEL also comprises a collector, a base electrode and an emitter electrode which are connected with the collector region, the base region and the emitter region. A quantum well active region is arranged in the base region. The collector is arranged on the back of the buffer layer. The buffer layer and the lower end face distributed Bragg reflector are equipped with doping types same as the doping type of the collector region. According to the T-VCSEL, the length of the transmission path of carriers in the collector region is reduced from the existing tens of microns to several microns, and the carriers are imported from the emitter region; therefore, the bad influence of the voltage drop of an internal resistor on the control of the working state of the device can be effectively reduced; and moreover, the transverse distribution of the potential in the collector region is improved.

Description

technical field [0001] The invention relates to a transistor vertical-cavity surface-emitting laser (Transistor Vertical-Cavity Surface-Emitting Laser, T-VCSEL for short), which belongs to the technical field of integrated optoelectronic devices. Background technique [0002] High-speed vertical-cavity surface-emitting lasers (VCSELs) based on III-V materials have been widely used due to the advantages of easy fiber coupling of the outgoing beam, low threshold current, wide direct modulation bandwidth, support for on-chip detection, easy realization of two-dimensional arrays, and low production costs. It is used in short-distance optical communication networks, data centers, and consumer electronics products such as USB, PCIExpress, and HDMI. At present, the world's major VCSEL manufacturers have launched products covering wavelengths from 850nm to 1550nm and a single-channel rate of 25Gb / s. However, as the bandwidth requirements of short-distance optical communications inc...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/187
CPCH01S5/183H01S5/187
Inventor 向宇潘时龙
Owner 苏州长瑞光电有限公司
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