Preparation method for cubic-phase dicerium trioxide single-crystal thin film

A technology of cerium oxide and single crystal thin film, which is applied in the direction of chemical instruments and methods, single crystal growth, single crystal growth, etc., and can solve the problems of non-disclosure

Inactive Publication Date: 2016-09-21
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Ce of other crystal faces 2 o 3 The preparation method, suc

Method used

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  • Preparation method for cubic-phase dicerium trioxide single-crystal thin film
  • Preparation method for cubic-phase dicerium trioxide single-crystal thin film
  • Preparation method for cubic-phase dicerium trioxide single-crystal thin film

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preparation example Construction

[0034] Please refer to figure 1 , the preparation method of the embodiment of the present invention comprises the following steps:

[0035] S102: Prepare a Ce evaporation source, specifically including:

[0036] a. After removing surface oxides from high-purity Ce rods (the purity of Ce is 99.9%), put them into a tantalum (Ta) crucible and put them into a high-temperature evaporation source;

[0037] b. Put the high-temperature evaporation source into the molecular beam epitaxy system (MBE), and get 2×10 after vacuum baking -10Millibar (mbar) ultra-high vacuum environment;

[0038] c. Gradually raise the temperature of the evaporation source, and degas the Ce source in the tantalum crucible to remove impurities until the temperature rises to 1600°C. After several rounds of degassing, the background vacuum of MBE reaches 5×10 -11 mbar, after trial evaporation of Ce on a clean molybdenum (Mo) plate, use X-ray photoelectron spectroscopy (XPS) to detect the chemical state of Ce...

Embodiment 1

[0049] Ce was deposited on the atomically flat single crystal tungsten (110) surface for about 9 minutes to obtain a Ce single crystal thin film with a thickness of about 2 nm.

[0050] The prepared Ce single crystal thin film was introduced into a high-vacuum fast sampling chamber, and a 1×10 -3 Mbar of high-purity oxygen, oxidized at room temperature for 32 hours, verified by XPS analysis, the main component of the oxidation product is CeO 2 .

[0051] The oxidized CeO 2 Re-introduce into the ultra-high vacuum chamber for annealing treatment, the annealing temperature is 900°C, and the time is 15 minutes.

[0052] The samples were monitored and detected during the preparation process and after the preparation of this example, and the results are as follows:

[0053] The chemical state of Ce during the preparation process was monitored by XPS. After depositing Ce film, 1×10 -3 After oxidizing Ce at room temperature under mbar oxygen pressure, after annealing at 900 °C. ...

Embodiment 2

[0056] Ce was deposited on the atomically flat single crystal tungsten (110) surface for about 20 minutes to obtain a Ce single crystal thin film with a thickness of about 5 nm.

[0057] The prepared Ce single crystal thin film is introduced into a high-vacuum rapid sampling chamber, and 1 atmosphere of high-purity oxygen is introduced, and it is oxidized at room temperature for 20 hours. After XPS analysis and verification, the main component of the obtained oxidation product is CeO 2 .

[0058] The oxidized CeO 2 Re-introduce into the ultra-high vacuum chamber for annealing treatment, the annealing temperature is 900°C, and the time is 30 minutes.

[0059] The samples were monitored and detected during the preparation process and after the preparation of this example, and the results are as follows:

[0060] XPS was used to monitor the chemical state of Ce during the preparation process, after oxidation of Ce at room temperature under 1 atmosphere of oxygen pressure, and a...

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Abstract

The invention belongs to the field of preparation of thin films, and discloses a preparation method for a cubic-phase dicerium trioxide single-crystal thin film. According to the invention, dicerium trioxide has a structure of (Mn0.5Fe0.5)2O3, and a space group of 206. The method comprises the following steps: taking a single-crystal tungsten (110) substrate, and subjecting the surface of the single-crystal tungsten (110) substrate to cleaning treatment so as to obtain an atomic-scale flat surface; taking a cerium (Ce) evaporation source, and depositing cerium (Ce) on the surface of the treated single-crystal tungsten (110) substrate so as to obtain a cerium (Ce) single-crystal thin film with a thickness of 2 to 5 nanometers on the surface of the treated single-crystal tungsten (110) substrate; oxidizing the cerium (Ce) single-crystal thin film at a room temperature so as to obtain cerium dioxide (CeO2); and subjecting cerium dioxide (CeO2) to annealing treatment in a vacuum environment with an annealing temperature of 900 DEGC and an annealing time of 15 to 30 minutes so as to obtain the dicerium trioxide (Ce2O3) single-crystal thin film of a (001) plane. The cubic-phase dicerium trioxide (Ce2O3) single-crystal thin film of the (001) plane obtained by using the method provided by the invention is a supplement to a conventional catalytic model system.

Description

technical field [0001] The invention relates to the preparation of thin film materials, in particular to a method for preparing a cubic phase cerium oxide single crystal thin film. Background technique [0002] Due to the different proportions of oxygen contained, cerium oxide has various structures, except for the most common cerium oxide (CeO 2 ) and cerium oxide (Ce 2 o 3 ), there are a variety of non-stoichiometric CeO x . Ce in it 2 o 3 There are two structures: one is La with hexagonal structure 2 o 3 structure, the space group is 164; the other is a cubic structure (Mn 0.5 Fe 0.5 ) 2 o 3 structure, the space group is 206. [0003] At present, there are many kinds of preparation CeO in the prior art 2 single crystal thin film method, and CeO is also available on the market 2 Single crystal bulk purchase. But for cubic Ce 2 o 3 At present, there is no single crystal to buy in the market, and it is mainly prepared in the laboratory. Currently, the prepa...

Claims

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Application Information

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IPC IPC(8): C30B23/02C30B29/02C30B29/16C30B33/00C30B33/02C01B19/04
CPCC01B19/004C01P2002/72C30B23/02C30B29/02C30B29/16C30B33/005C30B33/02
Inventor 冯卫刘琴谢东华朱燮刚陈秋云谭世勇
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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