Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method adopting magnetron sputtering to prepare flexible rare earth oxide film

A technology of rare earth oxide and magnetron sputtering, which is applied in sputtering plating, ion implantation plating, metal material coating process, etc. Oxide film is difficult to process and other problems, so as to avoid oxidation and price change, improve service life and functionality, and facilitate processing and cutting

Active Publication Date: 2016-09-28
扬州君禾薄膜科技有限公司
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing flexible rare earth oxide films by magnetron sputtering, which can solve the problems that rigid substrates cannot be applied to flexible devices in the prior art, magnetron sputtering oxide films are difficult to process, and films are easy to process. Oxidation and other issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The implementation process of the present invention is described in detail by taking the preparation of flexible rare earth europium oxide thin film as an example.

[0035] A method for preparing a flexible rare earth europium oxide film by magnetron sputtering, comprising the steps of:

[0036] a: choose europium oxide target as the sputtering target and place it in the magnetron sputtering chamber;

[0037] b: The liquid PDMS precursor is used as the deposition substrate, and the liquid PDMS substrate is spin-coated and placed on the rotating heating table of the magnetron sputtering chamber;

[0038] c: Vacuumize the magnetron sputtering chamber until the vacuum degree is 1.0×10 -4 Pa, and pass in argon gas to adjust the vacuum in the magnetron sputtering chamber to 3 Pa, and start to clean the surface of the europium oxide target for 5 minutes;

[0039] d: Before heating the rotary table to heat up the substrate, the substrate needs to be ultrasonically cleaned f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method adopting magnetron sputtering to prepare a flexible rare earth oxide film. The method comprises the steps of a, selecting a 4N rare earth metal target material; b, adopting a liquid PDMS precursor as a substrate; c, carrying out vacuum pumping, introducing argon, and cleaning the surface of the target material through pre-sputtering; d, heating a rotating heating table to the temperature required by film deposition, and maintaining the temperature; e, introducing a mixed gas, applying sputtering power, controlling the gas flow, and starting coating the surface of the substrate for 1 h; and f, maintaining a constant temperature for 3 h to obtain the flexible film when the temperature drops to the room temperature. According to the method, the technical problem that a peelable functional film cannot be prepared on a conventional regular rigid substrate is solved, the current situation that a rare earth metal oxide film can only be deposited on a rigid substrate is changed, and the thickness of the rare earth metal oxide film can be accurately controlled.

Description

technical field [0001] The invention relates to the technical field of preparation methods of flexible thin films, in particular to a method for preparing flexible rare earth oxide thin films by magnetron sputtering. Background technique [0002] The magnetron sputtering thin film preparation device in the existing thin film preparation technology can realize the coating of metal, non-metal simple substance and compound, etc., but almost all the rigid substrates are used in the existing planar reactive magnetron sputtering device. Such as silicon wafer, glass, mica and so on. Such substrates cannot be applied to flexible devices, which seriously affects the further processing and use of such films. Secondly, for metals with variable valence, such as europium oxide film, etc., when exposed to the air, it will be further oxidized and affect the function, eventually causing the loss or damage of the device function. [0003] Therefore, in order to solve the above-mentioned ex...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/001C23C14/08C23C14/35
Inventor 宋立军陈轶
Owner 扬州君禾薄膜科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com