Silicon carbide power device terminal structure and manufacturing method thereof

Abstract

The invention provides a silicon carbide power device terminal structure and a manufacturing method thereof. The silicon carbide power device terminal structure comprises a device cellular and a device terminal. The device terminal comprises a P-type junction terminal expansion region. The P-type junction terminal expansion region has N+ injection rings and etching grooves; the etching grooves are connected with the N+ injection rings, and the etching grooves are arranged at the outer sides of the N+ injection rings respectively; each etching groove is internally filled by an oxide layer; the adjacent N+ injection rings are separated by the etching grooves and the P-type junction terminal expansion region; the adjacent etching grooves are separated by the P-type junction terminal expansion region and the N+ injection rings; and the upper surface of the P-type junction terminal expansion region and the upper surfaces of the N+ injection rings are covered by the oxide layers. The silicon carbide power device terminal structure enables electric field distribution to be gentle, and enables a depletion layer of the terminal region to be fully expanded, thereby improving voltage withstand capability of the terminal, and reducing sensitivity degree of device breakdown voltage to the JTE region concentration. The structure can reduce partial electric field on the surface of the device, and meanwhile, reduces collision ionization rate of the surface of the device, thereby reducing surface electric leakage and improving reliability of the device surface.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices. In particular, a silicon carbide power device terminal structure and a manufacturing method thereof. Background technique [0002] With the development of modern technology and the improvement of people's living standards, people continue to put forward higher requirements for semiconductor power devices in terms of volume, reliability, withstand voltage, and power consumption. Traditional silicon devices are limited by the characteristics of the material itself, getting closer and closer to its theoretical limit. In this context, people began to explore new materials other than silicon materials, and silicon carbide technology was born. Silicon carbide has a series of advantages that traditional silicon materials do not have, such as higher breakdown electric field, higher thermal conductivity, and larger forbidden band width, making silicon carbide more suitable for high-v...

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Problems solved by technology

Traditional silicon devices are limited by the characteristics of the material itself, getting closer and closer to its theoretical limit

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