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A strontium stannate-based flexible transparent conductive electrode and preparation method thereof

A transparent conductive electrode and base flexible technology, applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, circuit, etc., can solve the problems of affecting the optical performance of transparent conductive film, expensive, easy to be restored, etc., to achieve good application Prospect, excellent electrical conductivity, and the effect of fewer process steps

Inactive Publication Date: 2017-08-29
DONGGUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the carrier concentration of the current transparent conductive film is close to the upper limit, so it is difficult to reduce the resistivity by further increasing the carrier concentration, and the high carrier concentration will seriously affect the optical properties of the transparent conductive film.
In addition, but indium is poisonous, expensive, poor in stability, and easily reduced in a hydrogen plasma atmosphere, people are trying to find a low-cost and high-performance ITO replacement material.

Method used

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  • A strontium stannate-based flexible transparent conductive electrode and preparation method thereof
  • A strontium stannate-based flexible transparent conductive electrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The invention discloses a strontium stannate-based flexible transparent conductive electrode, which is specifically prepared by the following preparation method:

[0029] SrSnO 3 Thin film layer deposition: with SrSnO 3 and Ag as the target material into the magnetron sputtering chamber, with PC as the flexible transparent substrate substrate, the distance between the target material and the substrate is controlled to be 100mm, and the background vacuum degree of the magnetron sputtering system is pumped to 5.0× 10 - 4 Pa, 30 sccm of high-purity argon is introduced as the sputtering gas to sputter SrSnO 3 The target material, the sputtering power is 80W, the total sputtering pressure is 1.0 Pa, and the SrSnO is deposited 3 film layer;

[0030] Ag layer deposition: SrSnO 3 After the deposition of the thin film layer is completed, the Ag target is sputtered with argon mixed gas as the sputtering gas, and the Ag layer is sputtered, the sputtering power is 30W, and th...

Embodiment 2

[0033] The invention discloses a strontium stannate-based flexible transparent conductive electrode, which is specifically prepared by the following preparation method:

[0034] SrSnO 3 Thin film layer deposition: with SrSnO 3 and Ag as the target material into the magnetron sputtering cavity, with PET as the flexible transparent substrate substrate, the distance between the target material and the substrate is controlled to be 100mm, and the background vacuum degree of the magnetron sputtering system is pumped to 5.0× 10 -4 Pa, 20 sccm of high-purity argon gas is used as the sputtering gas to sputter SrSnO 3 The target material, the sputtering power is 60W, the total sputtering pressure is 0.5 Pa, and the SrSnO is deposited 3 film layer;

[0035] Ag layer deposition: SrSnO 3 After the deposition of the thin film layer is completed, the Ag target is sputtered with argon mixed gas as the sputtering gas, and the Ag layer is sputtered, the sputtering power is 20W, and the sp...

Embodiment 3

[0038] The invention discloses a strontium stannate-based flexible transparent conductive electrode, which is specifically prepared by the following preparation method:

[0039] SrSnO 3 Thin film layer deposition: with SrSnO 3 and Ag as the target material into the magnetron sputtering cavity, with PEN as the flexible transparent substrate, the distance between the target material and the substrate is controlled to be 120mm, and the background vacuum degree of the magnetron sputtering system is pumped to 5.0× 10 -4 Pa, 20 sccm of high-purity argon gas is used as the sputtering gas to sputter SrSnO 3 The target material, the sputtering power is 20W, the total sputtering pressure is 0.5 Pa, and the SrSnO is deposited 3 film layer;

[0040] Ag layer deposition: SrSnO 3 After the deposition of the thin film layer is completed, use argon gas mixture as the sputtering gas to sputter the Ag target, start sputtering the Ag layer, the sputtering power is 20W, and the sputtering pr...

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Abstract

The invention discloses a strontium stannate-based flexible transparent conductive electrode and a preparation method thereof. The strontium stannate-based flexible transparent conductive electrode is deposited on a flexible transparent base substrate, wherein the strontium stannate-based flexible transparent conductive electrode is of an SrSnO3 / Ag / SrSnO3 composite layer structure and is formed by clamping an Ag layer by two SrSnO3 thin film layers; and the preparation method of the strontium stannate-based flexible transparent conductive electrode comprises an SrSnO3 thin film layer deposition step, an Ag layer deposition step, an SrSnO3 thin film layer secondary deposition step and the like. The strontium stannate-based flexible transparent conductive electrode and the preparation method thereof have the characteristics that the optical transmittance is high, the conductivity is excellent, the technological process is simple and the application prospect is wide.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a strontium stannate-based flexible transparent conductive electrode that can be used in optoelectronic devices such as flexible liquid crystal displays, flexible solar cells, organic and inorganic semiconductor lasers, and a preparation method thereof. Background technique [0002] Transparent conductive oxide (TCO) film is widely used in antistatic coatings, touch screens, solar cells, flat panel displays, heaters, anti-icing devices, optical coatings and transparent Optoelectronics and other aspects have broad development prospects, and the representative TCO film is In 2 o 3 : Sn (ITO) thin film, which has good photoelectric properties. However, the carrier concentration of the current transparent conductive film is close to the upper limit, so it is difficult to reduce the resistivity by further increasing the carrier concentration, and the high carrier concentrati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00C23C14/08C23C14/20C23C14/35
CPCC23C14/08C23C14/205C23C14/352H01B5/14H01B13/00
Inventor 吴木营杨雷何林凌东雄
Owner DONGGUAN UNIV OF TECH