Low-noise amplifier and radio frequency terminal

A low-noise amplifier and transistor technology, applied in amplifiers, power amplifiers, improved amplifiers to reduce nonlinear distortion, etc., to achieve the effect of improving the linear relationship

Active Publication Date: 2016-10-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem solved by the present invention is how to improve the linear relationship between the output and the input of the low noise amplifier of the prior art

Method used

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  • Low-noise amplifier and radio frequency terminal
  • Low-noise amplifier and radio frequency terminal
  • Low-noise amplifier and radio frequency terminal

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Embodiment Construction

[0033] As mentioned in the background technology section, the demand for low-noise amplifiers of radio frequency terminals in the prior art is moving towards the standard of low power consumption and low voltage. The low-noise amplifier is further developed from a typical cascode low-noise amplifier to a current complex type low noise amplifier, and then there is a image 3 The low noise amplifier shown, the amplifying elements are PMOS transistor Mp and NMOS transistor Mn, has lower power consumption and requires lower supply voltage, however, there are still technologies with poor linear relationship between output and input question.

[0034] The inventor of the present application analyzed the prior art. Figure 4 yes image 3 Schematic of the small-signal model of Node A to Node B in the LNA shown. Such as image 3 and 4 As shown, the node A is connected to the output terminal of the NMOS transistor Mn, and the node B is connected to the output terminal of the PMOS t...

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Abstract

The invention discloses a low-noise amplifier and a radio frequency terminal. The low-noise amplifier comprises a first NMOS transistor, wherein the gate is directly or indirectly coupled with the input end of the low-noise amplifier, and the source is directly or indirectly grounded; a first PMOS transistor, wherein the source is coupled with a power supply, the gate is coupled with the drain of the first NMOS transistor, the drain is coupled with the drain of the first NMOS transistor through a first inductor, and the drain is directly or indirectly coupled with the output end of the low-noise amplifier; a first capacitor, wherein the first end is coupled with the drain of the first NMOS transistor, and the second end is coupled with the gate of the first PMOS transistor; and a second inductor, wherein the first end is coupled with the gate of the first PMOS transistor, and the second end is grounded. According to the scheme of the low-noise amplifier and the radio frequency terminal, the linear relationship between the output and input of the low-noise amplifier can be improved, the low-voltage application is facilitated; moreover, the stage matching characteristic can be improved; and the noise performance is relatively high.

Description

technical field [0001] The invention relates to radio frequency amplifier design technology, in particular to a low noise amplifier and a radio frequency terminal. Background technique [0002] RF transceivers are widely used in vehicle monitoring, remote control, telemetry, small wireless networks, wireless meter reading, access control systems, community paging, industrial data acquisition systems, wireless tags, small wireless data terminals, safety and fire prevention systems, wireless remote control systems, In many fields such as biological signal acquisition, hydrometeorological monitoring, data communication, digital audio and digital image transmission. In a radio frequency terminal such as a radio frequency transceiver, a low noise amplifier (Low Noise Amplifier, LNA) is generally the first-level circuit in a terminal device, and its function is to generate as low noise as possible for the radio frequency signal Amplify to reduce the impact of noise on the circuit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H03F3/193H03F3/24
CPCH03F1/3205H03F3/193H03F3/245
Inventor 戴若凡
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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