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Preparation and application of Pd-doped SnO2-oxide-semiconductor CO sensor

An oxide semiconductor and sensor technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of high detection lower limit and low sensitivity of sensors, and achieve the effects of low detection lower limit, high sensitivity and simple method.

Inactive Publication Date: 2016-10-26
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the main factors limiting the practicality of this type of sensor is the high detection limit and low sensitivity of the sensor.

Method used

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  • Preparation and application of Pd-doped SnO2-oxide-semiconductor CO sensor
  • Preparation and application of Pd-doped SnO2-oxide-semiconductor CO sensor
  • Preparation and application of Pd-doped SnO2-oxide-semiconductor CO sensor

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Pd-doped SnO with a mass ratio of element Pd / Sn in the reactant of 0.015:1 2 Oxide semiconductors are used as sensitive materials to make side-heated carbon monoxide sensors. The specific manufacturing process:

[0038] (1) First add 42mg K 2 SnO 3 .3H 2 O, 180mg urea, 5ml ethanol, 5ml water were stirred for 10 minutes to form a homogeneous solution, and a certain amount of PdCl 2 Added to the above solution so that the mass ratio of element Pd and element Sn is 1.5wt%;

[0039] (2) Put the mixed solution of (1) into a 45ml polytetrafluoroethylene kettle and seal it, put it in an oven at 150°C for 24 hours, cool down to room temperature naturally after the end, collect the samples with ethanol and deionized water and centrifuge them and place them in the culture Keep the dish at 80°C for 12 hours and collect the samples;

[0040] (3) Calcining the above-mentioned nanometer gas-sensitive material at 500°C for 2 hours to obtain a gas-sensitive material, mixing the se...

Embodiment 2

[0043] Doping SnO with Pd with a mass ratio of element Pd / Sn of 0.030:1 in the reactant 2 Oxide semiconductors are used as sensitive materials to make side-heated carbon monoxide sensors. The specific manufacturing process:

[0044] (1) First add 42mg K 2 SnO 3 .3H 2 O, 180mg urea, 5ml ethanol, 5ml water were stirred for 10 minutes to form a homogeneous solution, and a certain amount of PdCl 2 Added to the above solution so that the mass ratio of element Pd and element Sn is 3.0wt%;

[0045] (2) Put the mixed solution of (1) into a 45ml polytetrafluoroethylene kettle and seal it, put it in an oven at 150°C for 24 hours, cool down to room temperature naturally after the end, collect the samples with ethanol and deionized water and centrifuge them and place them in the culture Keep the dish at 80°C for 12 hours and collect the samples;

[0046] (3) Calcining the above-mentioned nanometer gas-sensitive material at 500°C for 2 hours to obtain a gas-sensitive material, mixing ...

Embodiment 3

[0049] Pd-doped SnO with a mass ratio of element Pd / Sn in the reactant of 0.045:1 2 Oxide semiconductors are used as sensitive materials to make side-heated carbon monoxide sensors. The specific manufacturing process:

[0050] (1) First add 42mg K 2 SnO 3 .3H 2 O, 180mg urea, 5ml ethanol, 5ml water were stirred for 10 minutes to form a homogeneous solution, and a certain amount of PdCl 2 Added to the above solution so that the mass ratio of element Pd and element Sn is 4.5wt%;

[0051] (2) Put the mixed solution of (1) into a 45ml polytetrafluoroethylene kettle and seal it, put it in an oven at 150°C for 24 hours, cool down to room temperature naturally after the end, collect the samples with ethanol and deionized water and centrifuge them and place them in the culture Keep the dish at 80°C for 12 hours and collect the samples;

[0052] (3) Calcining the above-mentioned nanometer gas-sensitive material at 500°C for 2 hours to obtain a gas-sensitive material, mixing the se...

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Abstract

The invention relates to a preparation method of a Pd-doped SnO2-oxide-semiconductor CO sensor and application of the Pd-doped SnO2-oxide-semiconductor CO sensor to the detection of carbon monoxide concentration in mines and atmospheric environments and belongs to the technical field of gas sensors. The Pd-doped SnO2-oxide-semiconductor CO sensor comprises an Al2O3 insulating ceramic tube, a Pd-doped SnO2-oxide-semiconductor sensitive material and a nickel-cadmium-alloy heating coil, wherein the Al2O3 insulating ceramic tube is sold on the market and provided with 2 annular gold electrodes, the Pd-doped SnO2-oxide-semiconductor sensitive material coats the outer surfaces of the annular gold electrodes and the Al2O3 insulating ceramic tube, and the nickel-cadmium-alloy heating coil penetrates the Al2O3 insulating ceramic tube. The Pd-doped SnO2-oxide-semiconductor CO sensor has the advantages that the sensor has good linearity to low-concentration CO (with detection lower limit being 10ppm), so that the sensor can be well applied to the detection of CO in the atmospheric environments and mines, and mine safety and environment safety can be further judged by detecting the carbon monoxide concentration.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, in particular to a Pd-doped SnO 2 Preparation method of oxide semiconductor CO sensor and its application in detecting carbon monoxide concentration in mine and atmospheric environment. Background technique [0002] Carbon monoxide (CO) is a colorless, tasteless and odorless gas that is the third most carbon-containing component in the atmosphere, second only to CO 2 and CH 4 , is an important gas in the study of the global carbon cycle. In the case of uneven distribution of emission sources, the concentration of global atmospheric CO has obvious temporal and spatial distribution differences, and it is often used as an important tracer in the study of greenhouse gas sources and sinks. In 1949, CO in the atmosphere was discovered through the study of solar spectrum, and the first measurement of CO concentration in the atmosphere was realized by using the spectrometer method; since then, rel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 王庆吉林君李旭
Owner JILIN UNIV
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