Multi-wavelength array laser and manufacture method and use method thereof

A manufacturing method and laser technology, applied in the field of lasers, can solve the problems of limiting the use of electron beam lithography, expensive processing costs, and long processing time, and achieve the effects of ensuring laser wavelength coverage, strong wavelength correction capabilities, and small crosstalk

Inactive Publication Date: 2016-11-09
GUANGXUN SCI & TECH WUHAN +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Electron beam lithography is currently the most advanced micro-nano processing method, but there are also problems such as long processing time, expensive processing costs and expensive equipment, which limit the use of electron beam lithography in large-scale industrial production

Method used

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  • Multi-wavelength array laser and manufacture method and use method thereof
  • Multi-wavelength array laser and manufacture method and use method thereof
  • Multi-wavelength array laser and manufacture method and use method thereof

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Embodiment 1

[0067] Embodiment 1 of the present invention provides a multi-wavelength array laser, such as image 3 As shown, including at least two distributed Bragg reflection lasers (such as image 3 As shown, including distributed Bragg reflection laser 11, distributed Bragg reflection laser 12, distributed Bragg reflection laser 13...), reference Figure 4 , each distributed Bragg reflection laser includes an active region structure 111 and a grating region structure 112, such as Figure 3-Figure 5 Shown:

[0068] The grating region structure 112 of each DBR laser includes one or more grating regions, and each grating region is separated by a specified length. Wherein, gratings with the same grating period Λ are used to form the grating area in each distributed Bragg reflection laser.

[0069] The grating area is separated by a specified length as the sampling length L in the figure S After subtracting the length Lg of the grating area in the figure, it is obtained by Figure 5 A...

Embodiment 2

[0088] Embodiment 1 of the present invention introduces a multi-wavelength array laser, and analyzes the feasibility of a multi-wavelength array laser proposed by the present invention in principle by combining the technical problems described in the background technology, and The problems that may be encountered in the implementation process and the aspects that can be optimized are partially described. Embodiment 2 of the present invention is based on the above-mentioned embodiment 1, and the last mentioned situation may not be able to achieve the expected accuracy. After research, it is found that the overall structure of the grating region can be changed by supplying power to the electrodes in the grating region structure. Effective refractive index, so that each reflection peak of the grating comb reflection spectrum can be adjusted within a controllable range to complete translation within a small range. Therefore, another realizable solution is provided. Compared with t...

Embodiment 3

[0094] On the basis that Embodiment 1 provides a multi-wavelength array laser, the present invention also provides Embodiment 3: a manufacturing method of a multi-wavelength array laser, which can be used to manufacture such as Embodiment 1 or Embodiment 2. The multi-wavelength array laser, such as Figure 10 As shown, the manufacturing method includes the following steps:

[0095] In step 201, the active area structure part and / or the phase area structure part of each distributed Bragg reflector laser used to make the multi-wavelength array laser is masked on the wafer, and the grating area is formed by using the holographic exposure method The structure part etches grating areas with the same grating period; wherein, the interval of each grating area in each distributed Bragg reflection laser is set according to the wavelength to be lased;

[0096] In step 202, the active region structure is grown in the active region structure, the grating region structure is grown in the ...

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Abstract

The invention relates to the technical field of lasers, and provides a multi-wavelength array laser and a manufacture method and a use method thereof. The laser comprises at least two Distributed Bragg Reflector (DBR) lasers. Each DBR laser includes an active region structure and a grating region structure. The grating region structure of each DBR laser includes one or more grating regions. The grating regions are apart by an assigned length. The grating regions in each DBR are formed by the gratings with the same grating period. In each DBR laser, a sampling length value formed by a respective grating region length and the corresponding grating apart assigned length is determined according to a lasing wavelength emitted from the DBR lasers. The lasing wavelengths of the different DBR lasers are different by carrying out different periods of sampling manufacture on the gratings, and the multi-wavelength array laser with the low cost is realized. Each laser has high consistent performance in the laser array by the sampling grating design and the active region design.

Description

【Technical field】 [0001] The invention relates to the technical field of lasers, in particular to a multi-wavelength array laser, a manufacturing method and a using method thereof. 【Background technique】 [0002] Semiconductor lasers are important light sources in optical fiber communication systems. It is small in size and high in efficiency, and is very suitable for use in optical fiber communication systems. At present, optical fiber communication systems generally use wavelength division multiplexing to increase the communication capacity of a single optical fiber. Different channels use different wavelengths for communication transmission. Traditional communication light sources use discrete lasers, which are bulky, high power consumption, and expensive. The monolithic integrated chip has the advantages of small size and low power consumption, which can reduce the operating cost of the system. Therefore, the multi-wavelength array laser that integrates multiple diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/125
CPCH01S5/125
Inventor 赵建宜王任凡张明洋
Owner GUANGXUN SCI & TECH WUHAN
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