Pre-cleaning treatment method for stains adhering to surfaces of linearly-cut monocrystalline silicon fragments

A treatment method and adhesion technology, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve the problems of low processing costs, achieve large production capacity, simple operation, and reduce the difficulty of chemical cleaning and treatment cost effects

Active Publication Date: 2016-11-16
HENAN SHENGDA PHOTOVOLTAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for pre-cleaning the adherent dirt on the surface of single crystal silicon wire-cut fragments, which overcomes the defects of the existing processing technology, and the processing cost is low and suitable for the production and use of the next process.

Method used

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Effect test

Embodiment

[0017] The method for pre-cleaning the adherent dirt on the surface of the single crystal silicon wire-cut debris, the following steps are performed in sequence:

[0018] Step 1: Put the wire-cut pieces into the plastic turnover box (the size of the current turnover box is length: 70cm, width: 55cm, height: 35cm), 30kg per box, add tap water to soak for 30 minutes, stir and clean, drain the dirty water, remove A small amount of silicon powder and dirt on the surface of the silicon wafer;

[0019] Step 2: Add about 45 liters of tap water, add 100 grams of phosphorus-free formula detergent, stir evenly and soak for 20 minutes, to remove the cutting waste liquid and adhesive dirt on the surface of the silicon wafer;

[0020] Step 3: NaOH (concentration is 99%) 1.5 kg of caustic soda, add 3-4 liters of tap water into a plastic container to dissolve, pour it into the detergent cleaning liquid and stir evenly after completely dissolving, the concentration of NaOH in the cleaning liq...

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Abstract

Provided is a pre-cleaning treatment method for stains adhering to surfaces of linearly-cut monocrystalline silicon fragments. The method sequentially comprises the following steps that a, the fragments are placed in a turnover box, tap water is added to soak the fragments, and then dirty water is drained; b, tap water is added to the turnover box, the White Cat non-phosphate formula cleanser essence is added to be evenly stirred, the White Cat non-phosphate formula cleanser essence diluent is formed, and the fragments are soaked in the diluent; c, NaOH caustic soda flakes of 1.5 kg are fetched and dissolved in water, the White Cat non-phosphate formula cleanser essence diluent is poured into the solution to be evenly stirred after the flakes are completely dissolved, mixed cleaning liquid is formed, the concentration of NaOH in the mixed cleaning liquid is controlled to be 2.5%-3%, the temperature of the mixed cleaning liquid is controlled to be 20-35 DEG C, and then soaking and stirring are carried out; and d, the turnover box is rinsed with tap water, and the cleaned fragments are obtained. The pre-cleaning treatment method has the beneficial effects that no mechanical production equipment is needed, operation is easy, the production cost is low, and throughput is high; and residual waste cutting liquid and adhesive stains of the fragments are removed thoroughly, and the subsequent chemical cleaning difficulty of the monocrystalline silicon fragments and the processing cost are reduced.

Description

technical field [0001] The invention relates to the technical field of manufacturing solar single and polycrystalline silicon wafers, in particular to the washing technology of monocrystalline silicon wire-cut fragments. Background technique [0002] In order to reduce production costs, recycling monocrystalline silicon wire-cut fragments is a must in the industry. How to completely remove the residue of cutting waste liquid and adherent dirt generated in the cutting process of the single crystal silicon wire cutting fragments will reduce the difficulty and processing cost of the subsequent chemical cleaning of the single crystal silicon fragments. is a subject. [0003] In the prior art, most of the cleaning equipment in the industry uses low-concentration NaOH solution to wash and remove the surface adhesion dirt of broken pieces during the cutting process, or use acid cleaning solution HF+H 2 o 2 +H 2 O is cleaned and removed. The first method requires equipment assis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/04B08B3/08B08B3/10
CPCB08B3/044B08B3/08B08B3/102
Inventor 王民磊郭会杰刘国军刘富强方圆杨国辰武肖伟
Owner HENAN SHENGDA PHOTOVOLTAIC TECH CO LTD
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