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l10-mnga or l10-mnal base wide linear response magnetic sensor and preparation method

A l10-mnal, magnetic sensor technology, applied in the fields of magnetic field-controlled resistors, electromagnetic device manufacturing/processing, material selection, etc., can solve the problem that the permanent magnet thin film increases the process difficulty and manufacturing cost, and it is difficult to miniaturize the device. And other issues

Active Publication Date: 2018-10-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, when using the GMR spin-valve structure and the magnetic tunnel junction, the design and preparation method of the buried permanent magnetic film greatly increases the process difficulty and manufacturing cost, and it is difficult to miniaturize the device
[0005] At present, there are few reports on the use of perpendicular magnetic anisotropy materials to prepare magnetic multilayer films with wide linear response magnetic sensors, mainly vertically oriented [Co / Pt(Pd)]n multilayer films, Pt / CoFe, FePt

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  • l10-mnga or l10-mnal base wide linear response magnetic sensor and preparation method
  • l10-mnga or l10-mnal base wide linear response magnetic sensor and preparation method
  • l10-mnga or l10-mnal base wide linear response magnetic sensor and preparation method

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Embodiment Construction

[0027] In order to more clearly illustrate the principle and implementation characteristics of the present invention, it will be combined with L1 0 - MnGa-based multilayer film wide linear response magnetic sensor example to further illustrate the present invention. see figure 1 As shown, the present invention provides a L1 0 -MnGa or L1 0 -MnAl-based wide linear response magnetic sensor, its sample structure includes: a substrate 1, the material of the substrate 1 is a CaAs (001) substrate; a smooth layer 2, which is made on the substrate 1, the smooth The material of layer 2 is GaAsbuffer, the thickness is 150nm; a reference magnetic layer 3, which is made on the smooth layer 2, L1 0 -MnGa(MnAl) or L1 0 -MnGa / FM or L1 0 -MnAl / FM bilayer film with a thickness of 40nm. Under zero field, the magnetization direction of the reference magnetic layer 3 is perpendicular to the film surface of the sensor multilayer film, and is perpendicular to the magnetic moment of the subse...

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Abstract

A kind of L10-MnGa or MnAl base wide linear response magnetic sensor, comprises: a substrate, provides the epitaxy foundation for the multilayer film of subsequent growth; A smooth layer, it is made on the substrate, provides good interface flatness and crystal grid matching; a reference magnetic layer fabricated on the smooth layer with high crystal quality; an intermediate layer fabricated on the reference magnetic layer; a probe magnetic layer fabricated on the intermediate layer and grown epitaxially; a capping layer , which is fabricated on the detection magnetic layer and plays the role of a protective film. The invention provides a magnetic sensitive sensor with simple process, low cost, wide linear response range and high sensitivity.

Description

technical field [0001] The invention relates to the field of spintronics materials and magnetic sensors, in particular to a L1 0 -MnGa or L1 0 -MnAl-based wide linear response magnetic sensor and preparation method. Background technique [0002] With the development of modern technology, high-performance magnetic sensors have broad application prospects in many cutting-edge fields, such as data storage, automobiles, CNC machine tools, financial security and household appliances. Early magneto-sensitive sensors were mainly prepared based on semiconductor materials with Hall effect and magnetic materials with magnetic anisotropy magnetoresistance (AMR) effect, but these two types of materials have low magnetic field sensitivity. With the development of spintronics, magnetic sensors based on giant magnetoresistance effect and tunneling magnetoresistance effect have been widely studied and applied. The main reason is that these two types of magnetic sensors have high magnetic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12
CPCH10N50/85H10N50/10H10N50/01
Inventor 鲁军赵旭鹏毛思玮朱礼军赵建华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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