Annealing method and device for active matrix display substrate

Abstract

The invention discloses an annealing device for an active matrix display substrate, comprising: a heating device used to provide a suitable temperature during the manufacturing process of the active matrix display substrate; During the annealing process of the active matrix display substrate, an alternating magnetic field is formed on the film layer structure of the active matrix display substrate; the power supply device is used to provide power to the spiral alternating frequency thermal resistor. The present invention also provides an annealing method for an active matrix display substrate, including: providing a suitable temperature during the active matrix display substrate manufacturing process through a heating device; The matrix shows that an alternating magnetic field is formed on the film layer structure of the substrate. By implementing the technical solution provided by the invention, the annealing efficiency and hydrogenation efficiency of the active matrix display substrate can be improved without increasing the process temperature.

Description

technical field [0001] The invention relates to the technical field of display manufacturing, in particular to an annealing method and device for an active matrix display substrate. Background technique [0002] With the continuous improvement of consumers' requirements for smart terminal products, the electronic circuits of smart display products are becoming increasingly complex, the size of peripheral circuits is continuously reduced, and their integration is getting higher and higher. The LTPS (Low Temperature Poly-Silicon, low temperature polysilicon) technology The use of TFT (Thin-Film Transistor, thin-film transistor) panels allows finer electronic circuits. However, the application of AMOLED (Active-Matrix Organic Light-Emitting Diode, active-matrix organic light-emitting diode), due to its current-driven characteristics, inevitably requires the use of a panel with high mobility as the active layer material, and LTPS has almost become The only relevant technology c...

AI Technical Summary

Problems solved by technology

Among them, the introduction of impurity ions by ion implantation requires a high-temperature process to activate; on the one hand, a larger dose of ion implantation aggravates the damage to the crystal lattice, and the repair effect of rapid thermal annealing is gradually insufficient. The activation efficiency of large-dose implanted ions It also gradually decreases, resulting in the need to increase the dose of ion implantation, reducing the beat and further increasing the lattice damage

[0004] Increasing the activation temperature is a relatively good solution to the above problems. Above 1000 °C can even transform amorphous silicon into polysilicon with better performance. However, due to the poor resistance of glass substrates to high temperatures, generally Not higher than 600°C is a better process temperature, and reducing the process temperature is the current main demand for display device flexibility

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