Positive photo-resist stripping solution for semiconductor bump processing

A glue removal solution and semi-conductor technology, applied in the field of microelectronic chemical reagents, can solve problems such as difficult stripping process, achieve good removal effect, long service life, and low surface tension

Inactive Publication Date: 2016-11-23
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The recent VLSI semiconductor manufacturing uses a dry etching process to form the pattern of the conductive layer, however, it becomes difficult to remove the photoresist in the subsequent stripping process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The components and weight percentages of positive glue removing solution are respectively:

[0024] Water-soluble organic solvent 60%

[0025] Organic amines 20%

[0026] Metal protectant 0.1%

[0027] Surfactant 0.05%

[0028] Surfactant 0.02%

[0029] The balance is pure water.

[0030] Among them, the mass percent of each component of the water-soluble organic solvent in the positive glue remover is 10% of pyrrolidones, 15% of sulfones or sulfoxides, 35% of alcohol ethers, and N-methylpyrrolidone is used as an auxiliary organic solvent. Dimethyl sulfoxide and diethylene glycol monobutyl ether are preferred as organic solvents. Among them, the organic amines adopt a mixture of monoethanolamine and N-methylformamide. Wherein, the metal protecting agent is tolyl benzotriazole. Wherein, the surfactant is a polyether type nonionic surfactant. The surfactant auxiliary agent is a mixture of diethylenetriamine and phosphorothioate in a mass ratio of 1:1.

Embodiment 2

[0032] The components and weight percentages of positive glue removing solution are respectively:

[0033] Water-soluble organic solvent 35%

[0034] Organic amines 50%

[0035] Metal protectant 0.05%

[0036] Surfactant 0.1%

[0037] Surfactant 0.04%

[0038] The balance is pure water

[0039] Among them, the mass percentage of each component of the water-soluble organic solvent in the positive glue remover is 5% of pyrrolidones, 10% of sulfones or sulfoxides, and 20% of alcohol ethers, preferably unsubstituted pyrrolidone and N-methyl The base pyrrolidone mixture is used as an auxiliary organic solvent, preferably dimethyl sulfoxide and diethylene glycol monobutyl ether are used as an auxiliary solvent. Among them, N-methylformamide is used as organic amines. Wherein, the metal protective agent contains corrosion inhibitors tolylbenzotriazole and 2-mercaptobenzothiazole. Wherein, the surfactant is a polyether type nonionic surfactant. Wherein the surfactant auxiliary...

Embodiment 3

[0041] The components and weight percentages of positive glue removing solution are respectively:

[0042] Water-soluble organic solvent 40%

[0043] Organic amines 35%

[0044] Metal protectant 0.07%

[0045] Surfactant 0.08%

[0046] Surfactant 0.02%

[0047] The balance is pure water.

[0048] Among them, the mass percentage of each component of the water-soluble organic solvent in the positive glue remover is 10% of pyrrolidones, 10% of sulfones or sulfoxides, 20% of alcohol ethers, preferably unsubstituted pyrrolidone and N-ethyl The base pyrrolidone mixture is used as an auxiliary organic solvent, preferably diethyl sulfone and diethylene glycol monoethyl ether are used as an auxiliary solvent. Among them, N-methylformamide and diethanolamine are used as organic amines. Among them, the metal protective agent contains corrosion inhibitor hexadecylamine and 2-mercaptobenzothiazole. Wherein, the surfactant is a polyether type nonionic surfactant. Wherein the surfact...

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PUM

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Abstract

The invention relates to a positive photo-resist stripping solution for semiconductor bump processing. The positive photo-resist stripping solution comprises the following components in percentage by weight: 35%-60% of water-soluble organic solvent, 10%-50% of organic amines, 0.05%-0.1% of metal protective agent, 0.05%-0.1% of surfactant, 0.01%-0.04% of surface active coagent and the balance of purified water. According to the positive photo-resist stripping solution, the system stability is improved, the service life is long, the surface tension is low, the removal effect for a photo-resist in a tiny gap is good; and while the photo-resist is effectively removed, a semiconductor bump substrate metal layer is not corroded.

Description

technical field [0001] The invention relates to a positive glue remover for semiconductor bump manufacturing process, which belongs to the technical field of microelectronic chemical reagents. Background technique [0002] In the manufacturing process of integrated circuits and ultra-large integrated circuits, the photolithography step is generally to apply photoresist on SiO 2 On the sheet or metal film, after baking, exposure, and development, the required pattern with resist protection is obtained. Then an etching process is performed to transfer the pattern onto the surface of the wafer, and then the protective adhesive film covering the wafer is removed. Usually, more than a dozen photolithography processes are used in the process of manufacturing semiconductor devices, which includes removing the photoresist that is not covered by the photomask, forming a photolithographic pattern on the conductive layer of the semiconductor substrate, and then etching away The porti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/426
Inventor 戈烨铭
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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