Semiconductor device and forming method thereof

Abstract

The invention provides a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises the steps of providing a substrate, wherein a gate structure is formed on the surface of the substrate; etching a certain thickness part of the substrate on the two sides of the gate structure so as to form a groove in the substrate; forming a diffusion barrier layer on the surface of the sidewall of the groove that is close to the gate structure; forming a stress layer on the surface of the diffusion barrier layer to fill the groove with the stress layer; conducting the doping treatment on the stress layer and forming a heavily doped region in the stress layer. According to the technical scheme of the invention, doped ions in the heavily doped region are prevented from being diffused into the substrate under the gate structure, so that the short-channel effect is improved. Meanwhile, the source / drain breakdown voltage is increased and the leakage current of the semiconductor device is reduced.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of semiconductor devices and improve the performance of devices. [0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become more and more common means to improve the performance of semiconductor devices through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance of...

AI Technical Summary

Problems solved by technology

[0005] However, in practical applications, it is found that the semiconductor devices formed by the prior art have significant short-channel effect problems and have relatively large leakage currents.

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