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Formation method of semiconductor structure

A semiconductor and gas technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of metal plug contact performance to be improved, achieve good side wall morphology, prevent etching damage, and increase contact area Effect

Active Publication Date: 2016-11-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The contact performance between the copper metal wire formed by the prior art and the metal plug at the bottom still needs to be improved

Method used

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  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

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Embodiment Construction

[0039] As mentioned in the background art, the contact performance between the copper metal wire and the metal plug at the bottom still needs to be improved.

[0040] Research has found that in the prior art, an electroplating process is usually used to form copper metal lines, that is, an opening is formed in the second dielectric layer, and then an electroplating process is used to fill the opening with copper to form a copper metal line. However, as the feature size continues to decrease, when the second dielectric layer is patterned, the position of the opening formed due to the limitation of the photolithography process is likely to shift, and due to the limitation of the etching process, the bottom of the formed opening The width will be smaller than that of the top, and when the copper metal line is formed in the opening, the contact area between the copper metal line and the metal plug at the bottom will be reduced, which affects the electrical performance of the formed...

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Abstract

The invention relates to a formation method of a semiconductor structure. The formation method comprises the following steps that: a substrate is provided, and a metal plug is formed in the base; a copper metal layer is formed on the substrate; a hard mask layer is formed on the surface of the copper metal layer on the metal plug; with the hard mask layer adopted as a mask, the copper metal layer is removed by a certain thickness through using a halogen-free gas cluster ion beam etching process; and with the hard mask layer further adopted as the mask, the remaining copper metal layer is removed through using a neutral particle beam etching process, and a copper metal wire connected with the metal plug is formed at the bottom of the hard mask layer. With the formation method of the invention adopted, the contact area of the metal copper wire and the metal plug can be increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the development of semiconductor technology, the chip integration level of VLSI has reached hundreds of millions or even billions of devices, and multi-layer metal interconnection technology with more than two layers is widely used. Traditional metal interconnects are made of aluminum metal, but with the continuous reduction of device feature size in integrated circuit chips, the circuit density in metal interconnect lines continues to increase, and the required response time continues to decrease. Traditional aluminum Interconnect lines are no longer adequate. As process dimensions continue to shrink, copper interconnect technology has replaced aluminum interconnect technology. Compared with aluminum, the lower resistivity of copper metal can reduce the resistance-capacitance (RC) dela...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 张海洋姚达林
Owner SEMICON MFG INT (SHANGHAI) CORP
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