Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby

A technology of gas clusters and ions, applied in ion implantation plating, sputtering plating, electrical components, etc., can solve problems such as etching

Active Publication Date: 2016-11-23
EXOGENESIS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, with the progressive requirement to realize smaller device components, other problems arise with photolithography using photoresist

Method used

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  • Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
  • Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
  • Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby

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Embodiment Construction

[0090]Referring now to FIG. 1 , FIG. 1 shows a schematic structure of a GCIB processing device 100 in the prior art. The low pressure vessel 102 has three fluidly connected chambers: a nozzle chamber 104 , an ionization / acceleration chamber 106 and a process chamber 108 . The three chambers are evacuated by vacuum pumps 146a, 146b and 146c, respectively. Pressurized condensable source gas 112 , such as argon, stored in gas storage cylinder 111 flows through gas metering valve 113 and feed tube 114 into stagnation chamber 116 . The pressure (typically several atmospheres) in the stagnation chamber 116 causes gas to be ejected through the nozzle 110 into a substantially lower pressure vacuum, resulting in the formation of a supersonic gas jet 118 . The cooling caused by the expansion in the jet causes a portion of the gas jet 118 to condense into clusters, each cluster consisting of a few to thousands of weakly bound atoms or molecules. The gas filter 120 controls the flow of ...

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Abstract

A method of forming a patterned hard mask on a surface of a substrate uses an accelerated neutral beam with carbon atoms. The objects set forth above as well as further and other objects and advantages of the present invention are achieved by the various embodiment's of the invention described herein below.

Description

technical field [0001] The present invention relates generally to methods and apparatus for low energy, neutral beam processing, and more particularly to methods and apparatus for extracting accelerated neutral monomers and / or neutral gas clusters from accelerated gas cluster ion beams High beam purity methods and systems for beams of accelerated gas cluster ions for processing substrates used in the manufacture of integrated circuits. Background technique [0002] During the past decade, gas cluster ion beams (GCIB) have become well known and widely used in various surface and subsurface treatment applications. Because gas cluster ions are typically massive, they tend to travel at relatively low velocities (compared to conventional ions) even when accelerated to substantially energetic levels. This low velocity, combined with the inherent weak binding capacity of the clusters, produces a unique surface treatment capability that results in reduced surface penetration and re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/00H01L21/02
CPCH01L21/02115H01L21/02238H01L21/02274H01L21/3065H01L21/3081H01L21/31105H01L21/31116H01L21/321C03C15/00C03C23/0055C03C2218/335H01J37/05H01J37/317H01J2237/006H01J2237/0812C23C14/042C23C14/0605H01L21/0337C23C14/5806C03C25/00
Inventor 肖恩·R·柯克帕特里克理查德·C·什夫卢加
Owner EXOGENESIS CORP
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