Organic field effect transistor, preparation method and application thereof

Abstract

The present invention provides an organic field effect transistor, preparation method and application thereof. The organic field effect transistor comprises a source electrode, a drain electrode, and a gate electrode, as well as a substrate, an organic semiconductor layer, and an organic insulating layer, wherein the substrate, the source electrode, the organic semiconductor layer, and the drain electrode are sequentially stacked and bonded, and the gate electrode is composed of a plurality of gate electrode units separated from each other; all gate electrode units are covered by the organic insulating layer, and arranged in parallel in the organic semiconductor layer to make the gate electrode parallel with the source electrode. The organic field-effect transistor is prepared by the following steps: preparing a source electrode on a substrate; applying a first organic semiconductor layer on the source electrode; applying a first organic insulating layer on the first organic semiconductor layer; preparing a gate electrode on the first organic insulating layer; preparing a second organic insulating layer on the gate electrode; etching the gate electrode; applying a second organic semiconductor layer; and preparing a drain electrode on the second organic semiconductor layer.

Description

Technical field [0001] The present invention belongs to the display field and the sensor field, the display field such as liquid crystal display, OLED display, electronic paper reader, etc.; the sensor field such as stress sensing, infrared sensing, biomedical sensing, etc., in particular to an organic field effect transistor and its Preparation method and application. Background technique [0002] Organic field effect transistor (OTFT) is a component of organic circuit, its performance plays a decisive role in the performance of the circuit. Due to the limitation of organic semiconductor materials and insulating materials, traditional organic field effect transistors lag far behind low temperature polysilicon transistors (LTPS) and metal oxide transistors (IGZO) in terms of on-current and mobility. With the rapid development of the electronic display industry, OLED has become a new display trend, and driving OLED requires its driving transistor to provide a larger on-current. T...

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Problems solved by technology

[0006] The object of the present invention is to provide an organic field effect transistor, aiming to solve the problem that in the existing organic field effect transistor, the gate electrode is in direct contact with the organic semiconductor material, causing the gate electrode to inject carriers into the organic semiconductor material layer, causing the organic field effect transistor There are obvious limitations in the control of the leakage current and the off-state current of the effect transistor; at the same time, it solves the problem of the small effective area of ​​carrier injection of the source electrode and the gate electrode caused by the traditional top gate or bottom gate, and the open current of the organic field effect transistor. small problem

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