High-linearity envelope tracking power amplifier with self-adaptive biased node

A technology for power amplifiers and envelope tracking, applied in power amplifiers, DC-coupled DC amplifiers, amplifiers, etc., can solve problems such as large AM-AM distortion, large distortion, and large voltage changes, and achieve the elimination of AM-AM distortion, Improve linearity and stability, improve the effect of linearity

Inactive Publication Date: 2016-12-14
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

To sum up, a simple ET PA can cause large AM-AM distortion
[0004] The power supply voltage of the envelope tracking power amplifier is variable, and for a fixed output common-gate stage grid bias, a smaller power supply voltage makes the output common-gate tube in the lin

Method used

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  • High-linearity envelope tracking power amplifier with self-adaptive biased node
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  • High-linearity envelope tracking power amplifier with self-adaptive biased node

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings.

[0033] Such as figure 1 , 2 , 3 shows the schematic diagram of the circuit structure of the bias node self-adaptive high linear envelope tracking power amplifier proposed by the present invention, and its structure is mainly divided into three parts, namely driving the cascode stage and its cascode stage self-bias The circuit, the output cascode stage and its self-bias circuit of the cascade stage, and the adaptive bias circuit of the two-stage cascode stage.

[0034] Such as figure 1 As shown, the driving cascode stage and its self-bias circuit of the cascode stage include N-type metal oxide semiconductor field effect transistors MN1, MN2, MN3, MN4, capacitors C1, C2, C3, C4, resistors R1, R2, R3, R4 and inductors L1, L2, where MN1 and MN2 have the same size, MN3 and MN4 have the same size, and the size of MN3 and MN4 is 1.5 times that of MN1 and MN2; the gate of M...

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Abstract

The invention provides a high-linearity envelope tracking power amplifier with a self-adaptive biased node, comprising a drive common-source common gate and a common-gate self-biased circuit thereof, an output common-source common gate and a common-gate self-biased circuit thereof, and a two-stage common-source self-adaptive biased circuit. Compared to the traditional fixed-gate biased envelope tracking power amplifier and linear power amplifier, the invention can offset the gain variation which is generated by the variable power voltage of an envelope tracking power amplifier, increase the gain compression features of A and B type power amplifiers, eliminate some AM-AM distortion and greatly improve the linearity and stability of the whole envelope tracking power amplifier.

Description

technical field [0001] The invention relates to the technical field of power amplifier structure, in particular to a bias node self-adaptive high linear envelope tracking power amplifier. Background technique [0002] In order to improve spectral efficiency, contemporary wireless communication systems adopt more complex modulation methods such as OFDM, QAM, etc., and as the data transmission rate increases, the power peak-to-average ratio (PAPR) becomes larger, which affects the linearity of the power amplifier. put forward higher requirements. The simplest way is to make the power amplifier work at the power backoff, but the efficiency of the power amplifier is greatly reduced at this time. In order to improve the efficiency at power backoff, many efficiency enhancement techniques such as envelope tracking (ET), envelope elimination and restoration (EER), Doherty load modulation, linear amplification of nonlinear components (LINC), Outphasing, etc. have been studied for a ...

Claims

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Application Information

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IPC IPC(8): H03F1/32H03F3/193H03F3/20H03F3/45
CPCH03F1/3211H03F3/193H03F3/20H03F3/45179H03F2200/451
Inventor 吴建辉陈建芳陈超李红
Owner SOUTHEAST UNIV
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