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Nitrogen-doped graphene modified graphite puree and preparation method thereof

A graphene modification, graphene technology, applied in cable/conductor manufacturing, carbon-silicon compound conductors, electrical components, etc., can solve the problems of low electrical conductivity of brush thickness and further improvement of electrical conductivity.

Active Publication Date: 2018-01-16
WUHU SAUNAKING ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conductivity of ordinary graphite puree needs to be further improved. In addition, the coating thickness of graphite puree is also the main reason for its low conductivity.

Method used

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  • Nitrogen-doped graphene modified graphite puree and preparation method thereof

Examples

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Comparison scheme
Effect test

preparation example 1

[0018] Preparation of nitrogen-doped graphene: 155g of urea (analytical pure) was added to 100mL of graphene oxide solution, after fully stirring and mixing; air-dried at 40°C for 10h to obtain a mixed powder; then the mixed powder was calcined to obtain the Nitrogen doped graphene. Wherein, the steps of calcination used are: starting from 20°C to 800°C and maintaining at 800°C for 1 hour, wherein the heating rate is 5°C / min; then cooling down to 30°C at a cooling rate of 10°C / min; wherein, the The calcination atmosphere is N 2 , N 2 The flow rate is 0.001m 3 / h.

preparation example 2

[0020] Preparation of nitrogen-doped graphene: Add 200g of urea (analytical pure) to 100mL of graphene oxide solution, stir and mix thoroughly; blow dry at 60°C for 6h to obtain mixed powder; then calcinate the mixed powder to obtain the Nitrogen doped graphene. Wherein, the steps of calcination used are: starting from 20°C to 800°C and maintaining at 800°C for 1 hour, wherein the heating rate is 5°C / min; then cooling down to 30°C at a cooling rate of 10°C / min; wherein, the The calcination atmosphere is N 2 , N 2 The flow rate is 0.001m 3 / h.

Embodiment 1

[0022] Nitrogen-doped graphene, conductive graphite, polypropylene resin (with a weight average molecular weight of 10,000), glass powder, zinc powder, terpineol, ethyl cellulose and polyvinylpyrrolidone in a weight ratio of 21:100: 25:1:1:30:1:1 Stirring for 2 hours at a rotational speed of 2000rpm to obtain nitrogen-doped graphene modified graphite puree A1;

[0023] Wherein, the added nitrogen-doped graphene is prepared from Preparation Example 1.

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Abstract

The invention discloses nitrogen-doped graphene modified graphite protoplasm. A preparation method for the nitrogen-doped graphene modified graphite protoplasm comprises the following steps: stirring nitrogen doped graphene, conductive graphite, resin, glass powder, zinc powder, terpilenol, ethyl cellulose and polyvinyl pyrrolidone to obtain the nitrogen doped graphene modified graphite protoplasm. The nitrogen-doped graphene modified graphite protoplasm has high electricity conducting performance; the using amount per unit area is small; the coating efficiency is high.

Description

technical field [0001] The invention relates to graphite puree, in particular to nitrogen-doped graphene modified graphite puree and a preparation method thereof. Background technique [0002] Graphite puree is made of conductive graphite or carbon black as the main raw material, and the prepared graphite puree is widely used in communication products, computers, portable electronic products, network hardware, medical instruments, household electronic products and aerospace electronic products. However, the electrical conductivity of general graphite puree needs to be further improved. In addition, the coating thickness of graphite puree is also the main reason for its low conductivity. Contents of the invention [0003] The object of the present invention is to provide a nitrogen-doped graphene-modified graphite protoplasm, which has strong electrical conductivity and a small unit dosage. [0004] In order to achieve the above object, the invention provides a preparation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B1/04
CPCH01B1/04H01B13/00
Inventor 马西健
Owner WUHU SAUNAKING ELECTRONICS TECH CO LTD
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