SiGe/Si epitaxial wafer growing method

A growth method and epitaxial growth technology, applied in the field of SiGe/Si epitaxial wafer growth, can solve the problems of inability to use semiconductor MOS device manufacturing, deterioration of MOS device performance, lattice mismatch, etc., so as to suppress dislocation growth and improve roughness. , the effect of improving quality

Inactive Publication Date: 2017-01-04
DONGGUAN LIANZHOU INTPROP OPERATION MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since the lattice constant of the germanium material is different from that of silicon, and there is a 4.2% lattice mismatch, epitaxial germanium directly on the silicon substrate will generate a large number of dislocations that penetrate to the surface to form defects, which greatly deteriorates the prepared MOS device. Performance, cannot be applied to the manufacture of semiconductor MOS devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A method for growing SiGe / Si epitaxial wafers, comprising the following steps:

[0018] Provide and clean single crystal Si substrates: provide Si(100) crystal plane single crystal Si substrates, and clean them by conventional methods;

[0019] Set a carbon nanotube layer on the epitaxial growth surface of the single crystal Si substrate: immediately after cleaning the single crystal Si substrate, lay a carbon nanotube layer on the epitaxial growth surface of the single crystal Si substrate, which can protect the clean Si substrate in time , to a certain extent, reduce the surface oxidation of single crystal Si after cleaning, help to improve the cleanliness of the substrate, and then improve the quality of the epitaxial wafer. The carbon nanotube layer includes a continuous integral structure of a plurality of carbon nanotubes, and the plurality of carbon nanotubes in the carbon nanotube layer extend along a direction parallel to the growth direction of the epitaxial w...

Embodiment 2

[0025] A method for growing SiGe / Si epitaxial wafers, comprising the following steps:

[0026] Provide and clean single crystal Si substrates: provide Si(100) crystal plane single crystal Si substrates, and clean them by conventional methods;

[0027] A carbon nanotube layer is arranged on the epitaxial growth surface of the single crystal Si substrate: immediately after cleaning the single crystal Si substrate, a carbon nanotube layer is laid on the epitaxial growth surface of the single crystal Si substrate. The carbon nanotube layer includes a continuous integral structure of a plurality of carbon nanotubes, and the plurality of carbon nanotubes in the carbon nanotube layer extend along a direction parallel to the growth direction of the epitaxial wafer.

[0028] Form a carbon-doped buffer layer on the surface of the carbon nanotube layer, and the carbon content in the carbon-doped buffer layer is less than 1%: put the single crystal Si substrate with the carbon nanotube la...

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PUM

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Abstract

The invention relates to the technical field of semiconductor materials, and in particular to a SiGe/Si epitaxial wafer growing method. The method includes the following steps: providing and cleaning a single crystal Si substrate; arranging one carbon nano tube layer on the epitaxial growing surface of the single crystal Si substrate; forming a carbon-doped buffer layer on the surface of the carbon nano tube layer which contains less than 1 percent of carbons; forming a seed crystal buffer layer on the surface of the carbon-doped buffer layer; and forming a SiGe epitaxial layer on the surface of the seed crystal buffer layer. According to the invention, the method introduces the carbon nano tube layer and the carbon-doped buffer layer, which reduces dislocation in epitaxial growth and defects of the epitaxial wafer, and increases the quality of SiGe epitaxial wafers.

Description

[0001] Technical field: [0002] The invention relates to the technical field of semiconductor materials, in particular to a SiGe / Si epitaxial wafer growth method. Background technique [0003] In recent years, the optoelectronic properties and fluorescence properties of silicon-based IV-IV two-phase alloys have attracted extensive attention from the scientific community. Silicon-based materials, such as silicon-based germanium-silicon materials, have much higher carrier mobility than silicon. On the other hand, their device preparation process is compatible with the traditional silicon device process, so it has been highly valued by the research field and the industry. Among them, the germanium-silicon heterojunction has become one of the research hotspots. Carrier mobility has attracted much attention, and silicon germanium materials have shown a much higher hole mobility than existing silicon materials in research, which is very suitable for the preparation of PMOS devices ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02381H01L21/02444H01L21/02502H01L21/02532H01L21/0262
Inventor 王文庆
Owner DONGGUAN LIANZHOU INTPROP OPERATION MANAGEMENT CO LTD
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