Selective removal of boron doped carbon hard mask layer

Abstract

Systems and methods for processing a substrate include arranging a substrate including a film layer on a substrate support in a processing chamber. The film layer includes a boron doped carbon hard mask. A plasma gas mixture is supplied and includes molecular hydrogen, nitrogen trifluoride, and a gas selected from a group consisting of carbon dioxide and nitrous oxide. Plasma is struck in the processing chamber or supplied to the processing chamber for a predetermined stripping period. The plasma strips the film layer during the predetermined stripping period and the plasma is extinguished.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 186,029, filed June 29, 2015. The entire disclosure of the aforementioned referenced application is incorporated herein by reference. technical field [0003] The present invention relates to substrate processing systems and methods, and more particularly to systems and methods for stripping boron-doped carbon hardmask layers. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors (to the extent described in this Background section), and aspects of this specification that may not qualify as prior art at the time of filing, neither expressly nor implicitly admit that prior art for this disclosure. [0005] During processing of a substrate, such as a semiconductor wafer, one or more film layers are deposited on t...

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Problems solved by technology

However, hard mask layers are also becoming increasingly difficult to remove with typical plasma lift-off processes

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